|
|
PDF 74AUP1G386 Data sheet ( Hoja de datos )
| Número de pieza | 74AUP1G386 | |
| Descripción | Low-power 3-input EXCLUSIVE-OR gate | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 74AUP1G386 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
74AUP1G386
Low-power 3-input EXCLUSIVE-OR gate
Rev. 02 — 10 January 2008
www.DataSheet4U.com
Product data sheet
1. General description
The 74AUP1G386 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G386 provides a single 3-input EXCLUSIVE-OR gate.
2. Features
s Wide supply voltage range from 0.8 V to 3.6 V
s High noise immunity
s Complies with JEDEC standards:
x JESD8-12 (0.8 V to 1.3 V)
x JESD8-11 (0.9 V to 1.65 V)
x JESD8-7 (1.2 V to 1.95 V)
x JESD8-5 (1.8 V to 2.7 V)
x JESD8-B (2.7 V to 3.6 V)
s ESD protection:
x HBM JESD22-A114E Class 3A exceeds 5000 V
x MM JESD22-A115-A exceeds 200 V
x CDM JESD22-C101-C exceeds 1000 V
s Low static power consumption; ICC = 0.9 µA (maximum)
s Latch-up performance exceeds 100 mA per JESD 78 Class II
s Inputs accept voltages up to 3.6 V
s Low noise overshoot and undershoot < 10 % of VCC
s IOFF circuitry provides partial Power-down mode operation
s Multiple package options
s Specified from −40 °C to +85 °C and −40 °C to +125 °C
1 page  
NXP Semiconductors
74AUP1G386www.DataSheet4U.com
Low-power 3-input EXCLUSIVE-OR gate
10. Static characteristics
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Typ
Tamb = 25 °C
VIH HIGH-level input voltage
VCC = 0.8 V
VCC = 0.9 V to 1.95 V
0.70 × VCC -
0.65 × VCC -
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
1.6 -
2.0 -
VIL LOW-level input voltage VCC = 0.8 V
VCC = 0.9 V to 1.95 V
--
--
VCC = 2.3 V to 2.7 V
--
VCC = 3.0 V to 3.6 V
--
VOH HIGH-level output voltage VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
VCC − 0.1 -
0.75 × VCC -
1.11 -
1.32 -
2.05 -
1.9 -
2.72 -
2.6 -
VOL LOW-level output voltage VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
IO = 1.1 mA; VCC = 1.1 V
--
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
--
--
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
--
--
IO = 2.7 mA; VCC = 3.0 V
--
IO = 4.0 mA; VCC = 3.0 V
--
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
IOFF
∆IOFF
power-off leakage current
additional power-off
leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
-
-
ICC
∆ICC
supply current
additional supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
--
--
CI input capacitance
VCC = 0 V to 3.6 V; VI = GND or VCC
-
1.0
CO output capacitance
VO = GND; VCC = 0 V
- 1.8
Max Unit
-V
-V
-V
-V
0.30 × VCC V
0.35 × VCC V
0.7 V
0.9 V
-V
-V
-V
-V
-V
-V
-V
-V
0.1
0.3 × VCC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.2
±0.2
V
V
V
V
V
V
V
V
µA
µA
µA
0.5 µA
40 µA
- pF
- pF
74AUP1G386_2
Product data sheet
Rev. 02 — 10 January 2008
© NXP B.V. 2008. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
13. Package outline
Plastic surface-mounted package; 6 leads
DB
74AUP1G386www.DataSheet4U.com
Low-power 3-input EXCLUSIVE-OR gate
SOT363
E AX
y
6
54
pin 1
index
12
e1 bp
e
3
wM B
HE v M A
A
A1
Q
Lp
detail X
c
01
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
c
D
E
e
e1 HE Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30 0.25
0.20 0.10
2.2
1.8
1.35 1.3
1.15
0.65
2.2 0.45 0.25
2.0 0.15 0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
IEC
REFERENCES
JEDEC
JEITA
SC-88
Fig 9. Package outline SOT363 (SC-88)
74AUP1G386_2
Product data sheet
Rev. 02 — 10 January 2008
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
© NXP B.V. 2008. All rights reserved.
11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet 74AUP1G386.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 74AUP1G386 | Low-power 3-input EXCLUSIVE-OR gate | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |