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PDF HMC383 Data sheet ( Hoja de datos )
| Número de pieza | HMC383 | |
| Descripción | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER | |
| Fabricantes | Hittite Microwave | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC383 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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v01.0606
HMC383
www.DataSheet4U.com
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
1
Typical Applications
Features
The HMC383 is ideal for use as a driver amplifier for:
Gain: 16 dB
• Point-to-Point Radios
Saturated Output Power: +18 dBm
• Point-to-Multi-Point Radios & VSAT
Output IP3: +25 dBm
• Test Equipment & Sensors
Single Positive Supply: +5.0 V @ 101 mA
• LO Driver for HMC Mixers
50 Ohm Matched Input/Output
• Military & Space
2.26 mm x 1.35 mm x 0.1 mm
Functional Diagram
General Description
The HMC383 is a general purpose GaAs PHEMT
MMIC Driver Amplifier which operates between
12 and 30 GHz. The amplifier provides 16 dB of
gain and +18 dBm of saturated power from a +5.0V
supply. Consistent gain and output power across the
operating band make it possible to use a common
driver/LO amplifier approach in multiple radio bands.
The HMC383 amplifier can easily be integrated into
Multi-Chip-Modules (MCMs) due to its compact size,
single supply operation, and DC blocked RF I/Os. All
data is measured with the chip in a 50 Ohm test fix-
ture connected via 0.025mm (1 mil) diameter wire
bonds of minimal length 0.31mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression
(P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
Min.
13
Typ. Max.
12 - 18
16
0.03 0.04
14
13
Min. Typ. Max.
18 - 24
14 17
0.03 0.04
12
12
Min. Typ. Max.
24 - 28
13 16
0.03 0.04
14
7
Min. Typ. Max.
28 - 30
12 15
0.03 0.04
7
5
Units
GHz
dB
dB/ °C
dB
dB
12 15
13.5 16.5
13 16
13 16
dBm
18 18 17 18 dBm
25 25 24 23 dBm
9 7 6.5 7.5 dB
101 101 101 101 mA
1 - 26
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
1
Outline Drawing
v01.0606
HMC383
www.DataSheet4U.com
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
Die Packaging Information [1]
Standard
Alternate
GP-1
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
Pad Descriptions
Pad Number
Function
1 RFIN
2 Vdd
3
Die Bottom
RFOUT
GND
Description
This pad is AC coupled and matched to
50 Ohms from 12 - 30 GHz.
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
This pad is AC coupled and matched to
50 Ohms from 12 - 30 GHz.
Die bottom must be connected to RF/DC ground.
Interface Schematic
1 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC383.PDF ] | |
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