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HD1520FX PDF даташит

Спецификация HD1520FX изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «HIGH VOLTAGE NPN POWER TRANSISTOR».

Детали детали

Номер произв HD1520FX
Описание HIGH VOLTAGE NPN POWER TRANSISTOR
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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HD1520FX Даташит, Описание, Даташиты
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HD1520FX
HIGH VOLTAGE NPN POWER TRANSISTOR
FOR HIGH DEFINITION CRT DISPLAYS
n STATE-OF-THE-ART TECHNOLOGY:
DIFFUSED COLLECTOR "ENHANCED
GENERATION" EHVS1
n WIDER RANGE OF OPTIMUM DRIVE
CONDITIONS
n LESS SENSITIVE TO OPERATING
TEMPERATURE VARIATION
n FULLY INSULATED POWER PACKAGE U.L.
COMPLIANT
APPLICATIONS
n HORIZONTAL DEFLECTION FOR LARGE
AND FLAT SCREEN 100 Hz COLOR TVs
DESCRIPTION
The device is manufactured using Diffused
Collector in Planar technology adopting "Enhance
High Voltage Structure" (EHVS1) developed to fit
High-Definition CRT displays.
The new HD product series show improved silicon
efficiency bringing updated performance to the
Horizontal Deflection stage.
Figure 1: Package
ISOWATT218FX
Figure 2: Internal Schematic Diagram
Table 1:
Part Number
HD1520FX
Marking
HD1520FX
Package
ISOWATT218FX
Table 2: Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Vins
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB= 0)
Emitter-Base Voltage (IC= 0)
Collector Current
Collector Peak Current (tp < 5ms)
Base Current
Base Peak Current (tp < 5ms)
Total Dissipation at TC = 25 oC
Insulation Withstand Voltage (RMS) from All Three Leads to
External Heatsink
May 2005
Packaging
TUBE
Value
1500
700
10
15
22
8
12
64
2500
Rev. 1
Unit
V
V
V
A
A
A
A
W
V
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HD1520FX Даташит, Описание, Даташиты
HD1520FX
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Symbol
Tstg
TJ
Parameter
Storage Temperature
Max. Operating Junction Temperature
Value
-65 to 150
150
Unit
°C
°C
Table 3: Thermal Data
Rthj-case Thermal Resistance Junction-Case
Max
1.95
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
ICES
IEBO
VCEO(sus)*
Collector Cut-off Current VCE = 1500 V
(VBE = 0)
VCE = 1500 V
Emitter Cut-off Current VEB = 5 V
(IC = 0)
Collector-Emitter
Sustaining Voltage
IC = 100 mA
TC = 125 oC
700
(IB = 0 )
VEBO
Emitter-Base Voltage
(IC = 0 )
IE = 10 mA
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 9 A
VBE(sat)* Base-Emitter Saturation IC = 9 A
Voltage
hFE DC Current Gain
IC = 1 A
IC = 9 A
IC = 9 A
INDUCTIVE LOAD
ts Storage Time
tf Fall Time
IC = 9 A
IB(on) = 1.3 A
LBB(on) = 1.9 µH
VCE(fly) = 1040 V
* Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %.
10
IB = 1.8 A
IB = 1.8 A
VCE = 5 V
26
VCE = 1 V
VCE = 5 V
5
5.5
fh = 31250 Hz
IB(off) = -4.2 A
VBE(off) = -2.7 V
3.2
220
Max.
0.2
2
10
3
1.3
9.5
4
300
oC/W
Unit
mA
mA
µA
V
V
V
V
µs
ns
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HD1520FX Даташит, Описание, Даташиты
Figure 3: Safe Operating Area
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HD1520FX
Figure 6: Derating Curve
Figure 4: Output Chatacterisctics
Figure 7: Reverse Biased SOA
Figure 5: DC Current Gain
Figure 8: DC Current Gain
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Номер в каталогеОписаниеПроизводители
HD1520FXHIGH VOLTAGE NPN POWER TRANSISTORSTMicroelectronics
STMicroelectronics

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