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PDF HD1750JL Data sheet ( Hoja de datos )
| Número de pieza | HD1750JL | |
| Descripción | Very high voltage NPN power transistor | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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HD1750JL
Very high voltage NPN power transistor for high definition and slim
CRT display
PRELIMINARY DATA
Features
■ State-of-the-art technology: diffused collector
“enhanced generation“ EHVS1
■ Wider range of optimum drive conditions
■ Less sensitive to operating temperature
variation
■ In compliance with the 2002/93/EC European
directive
Description
The HD1750JL is manufactured using Diffused
Collector in Planar technology adopting new and
Enhanced High Voltage Stricture 1 (E.H.V.S.1)
developed to fit High-Definition CRT display. The
new HD product series show improved silicon
efficiency bringing updated performance to the
Horizontal Deflection stage.
3
2
1
TO-264
Internal schematic diagram
Applications
■ High-definition and slim CRT TV and monitors
Order code
Part number
HD1750JL
Marking
HD1750JL
Package
TO-264
Packaging
Tube
February 2007
Rev 3
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/10
www.st.com
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1 page  
HD1750JL
Electricwawl cwh.DaaratacStheereist4tUic.csom
Figure 7. Collector-emitter saturation Figure 8. Base-emitter saturation
voltage
voltage
Figure 9. Power losses
Figure 10. Power losses
Figure 11. Inductive load switching time Figure 12. Inductive load switching time
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