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Número de pieza | NTA4151P | |
Descripción | Small Signal MOSFET | |
Fabricantes | On Semiconductor | |
Logotipo | ||
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Small Signal MOSFET
−20 V, −540 mA, Single P−Channel,
Gate Zener, SC−75
Features
• Low RDS(on) for Higher Efficiency and Longer Battery Life
• Small Outline Package (1.6 x 1.6 mm)
• SC−75 Standard Gullwing Package
• ESD Protected Gate
• Pb−Free Package is Available*
Applications
• High Side Load Switch
• DC−DC Conversion
• Small Drive Circuits
• Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
(Note 1)
Steady State
VDSS
VGS
ID
−20
±6.0
−540
V
V
mA
Power Dissipation (Note 1)
Steady State
Pulsed Drain Current
tp =10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
PD
IDM
TJ,
TSTG
IS
TL
150
±1000
−55 to
150
−250
260
mW
mA
°C
mA
°C
THERMAL RESISTANCE RATINGS
Junction−to−Ambient − Steady State (Note 1) RqJA
833 °C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
RqJA
715
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 0
1
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) TYP
0.26 W @ −4.5 V
0.35 W @ −2.5 V
0.49 W @ −1.8 V
ID MAX
−540 mA
P−Channel MOSFET
D
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
33
Drain
2
1
SC−75 / SOT−416
CASE 463
STYLE 5
TN D
12
Gate Source
TN = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTA4151PT1
SC−75 3000/Tape & Reel
NTA4151PT1G
SC−75
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTA4151P/D
1 page NTA4151P
PACKAGE DIMENSIONS
SC−75 / SOT−416
CASE 463−01
ISSUE C
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−A−
S
2
D 3 PL
0.20 (0.008) M B
3
1
G −B−
K 0.20 (0.008) A
JC
LH
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 0.70 0.90 0.028 0.035
B 1.40 1.80 0.055 0.071
C 0.60 0.90 0.024 0.035
D 0.15 0.30 0.006 0.012
G 1.00 BSC
0.039 BSC
H −−− 0.10 −−− 0.004
J 0.10 0.25 0.004 0.010
K 1.45 1.75 0.057 0.069
L 0.10 0.20 0.004 0.008
S 0.50 BSC
0.020 BSC
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
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NTA4151P | Small Signal MOSFET | On Semiconductor |
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