HED57XXU12 PDF даташит
Спецификация HED57XXU12 изготовлена «SAMSUNG» и имеет функцию, называемую «Low Power Hall-Effect Switch». |
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Детали детали
Номер произв | HED57XXU12 |
Описание | Low Power Hall-Effect Switch |
Производители | SAMSUNG |
логотип |
17 Pages
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SPECIFICATION
MODEL : HED57XXU12
Low Power Hall-Effect Switch
DRAWN
BY
CHECKED
BY
APPROVED
BY
S.W. PARK
2006.9.19
S.W. KIM
2006.9.19
H.C. JOUNG
2006.9.19
SAMSUNG ELECTRO-MECHANICS CO.,LTD.
314,Maetan 3-Dong,Yeongtong-Gu,Suwon,
Kyunggi-Do,KOREA,443-743
HED57XXU12(060919) Rev.0 Page 1/17
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Revision history
(Model : HED57XXU12)
Date
2006.9.19
Rev. No
0
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Contents revised
Establishment
Design
S.W.Park
Approval
H.C.Joung
HED57XXU12(060919) Rev.0 Page 2/17
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1. Description
The HED57XXU12 Omnipolar Hall effect sensor IC is fabricated on mixed signal CMOS technology.
It incorporates advanced dynamic offset cancellation techniques to provide accurate and stable
magnetic switch points. The circuit design provides an internally controlled clocking mechanism to
cycle power to the Hall element and analog signal processing circuits.
This serves to place the high current-consuming portions of the circuit into a sleep mode.
Periodically the device is awakened by this internal logic and the magnetic flux from the Hall element
is evaluated against the predefined thresholds. If the flux density is above or below the BOP/BRP
thresholds then the output transistor is driven to change states accordingly.
While in the sleep cycle the output transistor is latched in its previous state. The design has been
optimized for service in applications requiring extended operating lifetime in battery powered systems.
The output
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transistor
of
the
HED57XXU12
is
switched
on
(BOP)
in
the
presence
of
a
sufficiently
strong South or North magnetic field. The output is switched off (BRP) in the absence of a magnetic
field.
2. Specification
2.1 Absolute Maximum Ratings
Supply Voltage, VDD :: 5V
Output Voltage, VOUT : 5V
Output Current, IOUT :10mA
Operating Temperature range (TA) : -40 to 85
Storage Temperature range (TS) : -55 to +150
ESD Sensitivity : MM 500V, HBM 5000V
Exceeding the absolute maximum ratings may cause fatal damage.
2.2 HED57XXU12 Electrical Specification
[Operating conditions Ta=25°C, VDD=2.5V to 3.5V]
Parameter
Symbol Test conditions Min. Typ. Max. Units
Supply Voltage
VDD Operating
2.5 2.75 3.5
V
IDD Awake, VDD=3.5V
- 3.0 5.0 mA
Supply Current
ISL Sleep, VDD=3.5V
- 3.5 6.0
IAVG Average, VDD=3.5V -
6.5 10.0
LOW Level Output Voltage VLOW B>BOP, IOUT=1mA
0.0 0.25 0.4
V
Output Leakage Current
ILEAK
B<BRP, VDD=3.5V
-
- 1.0
Awake mode time
TAWK Operating
- 50 120
Sleep mode time
TSL Operating
- 40 60
HED57XXU12(060919) Rev.0 Page 3/17
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HED57XXU12 | Low Power Hall-Effect Switch | SAMSUNG |
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