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PDF SEMIX353GB176HDS Data sheet ( Hoja de datos )
| Número de pieza | SEMIX353GB176HDS | |
| Descripción | Trench IGBT Modules | |
| Fabricantes | Semikron International | |
| Logotipo |  |
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SEMiX353GB176HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX353GB176HDs
www.DataSheet4U.com
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 150 °C
ICRM = 2xICnom
VCC = 1000 V
VGE ≤ 20 V
VCES ≤ 1700 V
Tc = 25 °C
Tc = 80 °C
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 225 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 9 mA
VGE = 0 V
VCE = 1700 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 1200 V
IC = 225 A
Tj = 125 °C
Tj = 125 °C
RG on = 5.6 Ω
RG off = 5.6 Ω
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
per IGBT
Values
1700
353
251
225
450
-20 ... 20
10
-55 ... 150
428
289
225
450
1800
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5.2
typ.
2
2.45
1
0.9
4.4
6.9
5.8
0.1
19.9
0.83
0.66
2100
2.83
250
75
155
930
180
85
max. Unit
2.45
2.9
1.2
1.1
5.6
8.0
6.4
0.3
0.086
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
GB
© by SEMIKRON
Rev. 12 – 16.12.2009
1
1 page  
SEMiX353GB176HDs
www.DataSheet4U.com
SEMiX 3s
spring configuration
© by SEMIKRON
Rev. 12 – 16.12.2009
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SEMIX353GB176HDS.PDF ] | |
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