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PDF HMC376LP3E Data sheet ( Hoja de datos )
| Número de pieza | HMC376LP3E | |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER | |
| Fabricantes | Hittite Microwave | |
| Logotipo |  |
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v00.1005
5
Typical Applications
The HMC376LP3 / HMC376LP3E is ideal for:
• Cellular/3G Infrastructure
• Base Stations & Repeaters
• CDMA, W-CDMA, & TD-SCDMA
• Private Land Mobile Radio
• GSM/GPRS & EDGE
www.DataS•heUeHt4FUR.ceoamllocation Applications
Functional Diagram
HMC376LP3 / 376LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
Features
Noise Figure: 0.7 dB
Output IP3: +36 dBm
Gain: 15 dB
Externally Adjustable Supply Current
Single Positive Supply: +5.0V
50 Ohm Matched Input/Output
General Description
The HMC376LP3 & HMC376LP3E are GaAs PHEMT
MMIC Low Noise Amplifiers that are ideal for GSM
& CDMA cellular basestation front-end receivers
operating between 700 and 1000 MHz. The amplifier
has been optimized to provide 0.7 dB noise figure,
15 dB gain and +36 dBm output IP3 from a single
supply of +5.0V. Input and output return losses are 14
and 12 dB respectively and the LNA requires only one
external component to optimize the RF Input match.
The HMC376LP3 & HMC376LP3E share the same
package and pinout with the HMC382LP3 1.7 - 2.2
GHz LNA. The HMC376LP3 & HMC376LP3E feature
an externally adjustable supply current which allows
the designer to tailor the linearity performance of the
LNA for each application.
5 - 124
Electrical Specifications, TA = +25° C, Vdd = +5V, Rbias = 10 Ohms*
Frequency Range
Gain
Parameter
Min.
12.5
Typ.
810 - 960
14.5
Max.
Min.
11.5
Typ.
700 - 1000
14.5
Gain Variation Over Temperature
0.005
0.01
0.005
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
Supply Current (Idd)
*Rbias resistor value sets current, see application circuit herein.
0.7
13
12
20
21.5
22
36
73
1.0
0.7
14
12
22
21
22
36
73
Max.
0.01
1.0
Units
MHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
5
Pin Descriptions
Pin Number
Function
1, 4, 5, 7, 9,
12 - 14, 16
N/C
2 RFIN
www.DataShee3t,46U, .1c0om
GND
8 Res
11 RFOUT
v00.1005
HMC376LP3 / 376LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
Description
No connection necessary. These pins may be connected
to RF/DC ground. Performance will not be affected.
This pin is matched to 50 Ohms with a 47 nH
inductor to ground. See application circuit.
These pins and package bottom must be
connected to RF/DC ground.
This pin is used to set the DC current of the amplifier
by selection of external bias resistor.
See application circuit.
This pin is AC coupled and matched
to 50 Ohms from 0.7 - 1.0 GHz.
Interface Schematic
15
Vdd
Power supply voltage. Choke inductor and bypass
capacitors are required. See application circuit.
Application Circuit
5 - 128
Note 1: L1, L2 and C1 should be located as close to the pins as possible.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC376LP3E.PDF ] | |
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