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NTE5705 PDF даташит

Спецификация NTE5705 изготовлена ​​​​«NTE Electronics» и имеет функцию, называемую «(NTE5700 - NTE5705) Industrial Power Module».

Детали детали

Номер произв NTE5705
Описание (NTE5700 - NTE5705) Industrial Power Module
Производители NTE Electronics
логотип NTE Electronics логотип 

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NTE5705 Даташит, Описание, Даташиты
NTE5700 thru NTE5705
Industrial Power Module
www.DataSheet4U.com
Description:
The NTE5700 through NTE5705 series of Integrated Power Circuits consist of power thyristors and
power diodes configured in a single package. Applications include power supplies, control circuits
and battery chargers.
Features:
D Glass Passivated Junctions for Greater Reliability
D Electrically Isolated Base Plate
D High Dynamic Characteristics
Absolute Maximum Ratings:
Maximum Repetitive Peak Reverse Voltage (VS £ 0), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Maximum Non--Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V
Maximum Repetitive Peak Off State Voltage Gate Open Circuit, VDRM . . . . . . . . . . . . . . . . . . 1200V
Thermal and Mechanical Characteristics:
Junction Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . --40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . --40° to +150°C
Maximum Internal Thermal Resistance, One Junction to Case, RthJC
DC Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.24K/W
Maximum Thermal Resistance, Base to Heatsink, RthCS
Mounting Surface Smooth and Greased . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.10K/W
Mounting Torque, Base to Heatsink ±10% (Note 1), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5Nm
Approximate Weight, wt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58g (2.0oz)
Note 1. A mounting compound is recommended and the torque should be checked after a period of
about 3 hours to allow for the spread of the compound.









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NTE5705 Даташит, Описание, Даташиты
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Rating Unit
Forward Conduction
Maximum DC Output Current
IO TC = +85°C, Full Bridge Circuits
(NTE5700, NTE5701, NTE5702)
25 A
Maximum Average On--State
and Forward Current
Maximum RMS Current
IT(AV)
IF(AV)
IRMS
180° Sine Wave Conduction Circuits
(All Types)
180° Sine Wave Conduction Circuit
(NTE5702)
12.5 A
28 A
Maximum Peak, One--Cycle
Non--Repetitive On--State
or Forward Current
ITSM
or
IFSM
10ms
8.3ms
10ms
8.3ms
100% VRRM Sinusoidal Half Wave,
Reapplied Initial TJ = TJ Max
No Voltage
Reapplied
300
315
357
375
A
A
A
A
www.DaMtaaSxheimetu4Um.coI2mt for Fusing
I2t 10ms 100% VRRM Initial TJ = TJ Max
8.3ms Reapplied
450 A2s
410 A2s
10ms No Voltage
8.3ms Reapplied
637 A2s
580 A2s
Maximum I2Öt for Fusing
I2Öt t = 0.1 to 10ms, No Voltage Reapplied, Note 2 6365 A2Ös
Maximum Value of Threshold
Voltage
VT(TO) TJ = +125°C
0.82 V
Maximum Value of On--State
Slope Resistance
rT TJ = +125°C
12 mW
Maximum Peak On--State
or Forward Voltage
VTM
VFM
ITM = p x IT(AV)
IFM = p x IF(AV)
T18J 0=°
+25°C,
Condition
1.35
1.35
V
V
Maximum Non--Repetitive Rate
of Rise of Turned On Circuit
di/dt
TIgJ==5+0102m5°AC,,trfr<om0.50m.6s7,VtpDR>M6,mITsM = p x IT(AV),
200 A/ms
Maximum Holding Current
IH RTJes=is+t2iv5e°CLo, aAdn,oGdeatSeuOpppelyn=C6irVc,uit
100 mA
Maximum Latching Current
IL RTJes=is+t2iv5e°CLo, aAdnode Supply = 6V,
250 mA
Triggering
Maximum Peak Gate Power
Maximum Average Gate Power
Maximum Peak Gate Current
Maximum Peak Negative Gate
Voltage
PGM
PG(AV)
IGM
--VGM
8.0 W
2.0 W
2.0 A
10 V
Maximum Gate Voltage Required VGT TJ = --40°C
to Trigger
TJ = +25°C
TJ = +125°C
Anode Supply = 6V
Resistive Load
3.0 V
2.0 V
1.0 V









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NTE5705 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d):
Parameter
Symbol
Test Conditions
Triggering (Cont’d)
Maximum Gate Current Required IGT TJ = --40°C
to Trigger
TJ = +25°C
Anode Supply = 6V
Resistive Load
TJ = +125°C
Maximum Gate Voltage that will
not Trigger
VGD
TJ = +125°C, Rated VDRM Applied
Blocking
Maximum Critical Rate of Rise of dv/dt TJ = +125°C, Exponential to 0.67VDRM,
Off--State Voltage
Gate Open Circuit
Maximum Peak Reverse and
Off--State Leakage Current
www.DataShaeteVt4RUR.cMom, VDRM
RMS Isolation Voltage
IRM
IDM
VINS
TJ = TJ Max, Gate Open Circuit
50Hz, Circuit to Base, All Terminals Shorted
Rating Unit
90 mA
60 mA
35 mA
0.2 V
200 V/ms
10
2.0
2500
mA
mA
V
Note 2. I2t for time tx = I2 Öt ¯ Ötx.
Pin Connection and Schematic Diagrams:
NTE No.
Description
Terminal Positions
5700
Single Phase,
Hybrid Bridge,
Common Cathode,
Freewheeling Diode
AC1 G1 (- )
AC2 G2 (+)
Schematic Diagrams
AC1
*
AC2
G1
G2
5701
Single Phase,
Hybrid Bridge,
Common Anode,
Freewheeling Diode
AC1 G1 (- )
AC2 G2 (+)
(- ) (+)
G1
AC1
*
AC2
G2
5702
Single Phase,
All SCR Bridge
AC2 G2 (- )
G1 G4
AC1 G3 (+)
(- ) (+)
G3
AC1
*
AC2
G4
G1
G2
(- )
* For transient protection, a Metal Oxide Varistor (MOV) may be connected externally across terminals AC1 & AC2.
(+)










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