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PDF HMD16M64D16EV Data sheet ( Hoja de datos )
| Número de pieza | HMD16M64D16EV | |
| Descripción | 128Mbyte(16Mx64) EDO Mode | |
| Fabricantes | Hanbit Electronics | |
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HANBiT
HMD16M64D16EV
128Mbyte(16Mx64) EDO Mode 4K/8K Ref. 3.3V, DIMM 168 pin
Part No. HMD16M64D16EV
GENERAL DESCRIPTION
The HMD16M64D16EV is a 16Mx64bits Dynamic RAM high density memory module. The HMD16M64D16EV consists
of sixteen CMOS 16Mx4bits DRAMs in TSOPІІ 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or
0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The HMD16M64D16EV is a Dual In-
line Memory Module and is intended for mounting into 168 pin edge connector sockets
www.DataShFeEetA4UT.cUoRmES
w Part Identification
HMD16M64D16EV- ---- 4KCycles/64ms Ref, Gold Plate Lead
HMD16M64D16EVA --- 8KCycles/64ms Ref, Gold Plate Lead
PERFORMANCE RANGE
SPEED
-5
-6
tRAC
50ns
60ns
tCAC
13ns
15ns
tRC
84ns
104ns
tHPC
20ns
25ns
w High-density 128MByte design
w New JEDEC standard proposal without buffer
w CAS-before-RAS Refresh capability
w RAS-only and Hidden refresh capability
w Single +3.3± 0.3V power supply
w EDO mode operation.
w LVTTL compatible inputs and outputs
w FR4-PCB design
w Access times : 50, 60ns
w Timing
50ns access
60ns access
w Packages
168-pin DIMM
w Marking
-5
-6
w Marking
D
PIN NAMES
Pin Name
Function
Pin Name
Function
Pin Name
Function
A0-A11 Address Input (4k /RAS0, /RAS2 Row Address Strobe
Vss Ground
ref)
A0-A12 Address Input (8k /CAS0 - /CAS7 Column
Address Vcc Power (+3.3V)
ref) Strobe
/WE0,/WE2 Read/Write Enable
SCL
Serial Clock
DQ0-DQ63 Data In/Out
/OE0,/OE2 Output Enable
NC No Connection
SDA
Serial Address /Data
I/O
SA0 - SA2 Address in EEPROM CB0 - CB7 Check Bit
URL: www.hbe.co.kr
REV.1.0 (August.2002)
- 1 - HANBit Electronics Co.,Ltd.
1 page  
HANBiT
HMD16M64D16EV
ICC1 : Operating Current * (/RAS , /CAS , Address cycling @tRC=min.)
ICC2 : Standby Current ( /RAS=/CAS=VIH )
ICC3 : /RAS Only Refresh Current * ( /CAS=VIH, /RAS, Address cycling @tRC=min )
ICC4 : EDO Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min )
ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V )
ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @tRC=min )
IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 4.5V, all other pins not under test = 0V)
IOL : Output Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 3.3V
VOH : Output High Voltage Level (IOH= -2mA )
VOL : Output Low Voltage Level (IOL = 2mA )
* NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the
output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once
www.DataSheet4U.com
while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle.
CAPACITANCE
o
( TA=25 C, Vcc = 3.3V, f = 1Mz )
DESCRIPTION
Input Capacitance (A0-A11)
Input Capacitance (/WE0,/WE2,/OE0,/OE2)
Input Capacitance (/RAS0,/RAS2)
Input Capacitance (/CAS0-/CAS7)
Input/Output Capacitance (DQ0-63)
SYMBOL
CIN1
C IN2
CIN3
CIN4
CDQ1
MIN
-
-
-
-
-
MAX
90
66
66
24
17
UNITS
pF
pF
pF
pF
pF
AC CHARACTERISTICS
(
0
o
C
≤
TA
≤
70oC
,
Vcc
=
3V±10%,
See
notes
1,2.)
STANDARD OPERATION
Random read or write cycle time
Read-modify-write cycle time
Access time from /RAS
Access time from /CAS
Access time from column address
/CAS to output in Low-Z
/OE to output in Low-Z
Output buffer turn-off delay from /CAS
Transition time (rise and fall)
/RAS precharge time
/RAS pulse width
/RAS hold time
/CAS hold time
/CAS pulse width
URL: www.hbe.co.kr
REV.1.0 (August.2002)
SYMBOL
MIN
tRC
tRWC
tRAC
tCAC
tAA
tCLZ
tOLZ
tOFF
tT
tRP
tRAS
tRSH
tCSH
tCAS
84
128
3
3
3
1
30
50
8
38
8
-5-
-5
MAX
50
13
25
13
50
10K
10K
MIN
104
153
3
3
3
1
40
60
10
40
10
-6
MAX
UNIT
ns
ns
60 ns
15 ns
30 ns
ns
ns
13 ns
50 ns
ns
10K ns
ns
ns
10K ns
HANBit Electronics Co.,Ltd.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMD16M64D16EV.PDF ] | |
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