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PDF HMD1M32M2G Data sheet ( Hoja de datos )
| Número de pieza | HMD1M32M2G | |
| Descripción | 4Mbyte(1Mx32) Fast Page Mode | |
| Fabricantes | Hanbit Electronics | |
| Logotipo |  |
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HANBit
HMD1M32M2G
4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design
Part No. HMD1M32M2G
DESCRIPTION
The HMD1M32M2G is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin
SOJ package on single sides the printed circuit board with decoupling capacitors. The HMD1M32M2G is optimized for
application to the systems, which are required high density and large capacity such as main memory of the computers and an
image memory systems, and to the others, which are, requested compact size.
The HMD1M32M2G provides common data and outputs.
PIN ASSIGNMENT
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PIN SYMBOL PIN SYMBOL PIN SYMBOL
w 72 pins Single In-Line Package
w Fast Page Mode Capability
w Single +5V± 0.5V power supply
w Fast Access Time & Cycle Time
tRAC tCAC tRC tPC
HMD1M32M2G-6 60 15 110 40
HMD1M32M2G-7 70 18 130 45
w Low Power
Active: 1,870/1,650/1,430 mW(MAX)
Standby: 11mW(CMOS level : MAX)
w /RAS Only Refresh, /CAS before /RAS Refresh,
Hidden Refresh Capability
w All inputs and outputs TTL Compatible
w 1,024 Refresh Cycles/16ms
PRESENCE DETECT PINS (Optional)
PIN
60NS
70NS
PD1
Vss Vss
PD2
Vss Vss
PD3
NC Vss
PD4 NC NC
1 Vss 25 DQ22 49 DQ8
2
DQ0
26
DQ7
50 DQ24
3 DQ16 27 DQ23 51
DQ9
4
DQ1
28
A7
52 DQ25
5 DQ17 29 NC 53 DQ10
6
DQ2
30
Vcc
54 DQ26
7 DQ18 31 A8 55 DQ11
8
DQ3
32
A9
56 DQ27
9 DQ19 33 NC 57 DQ12
10 Vcc 34 /RAS2 58 DQ28
11 NC 35 NC 59 Vcc
12 A0 36 NC 60 DQ29
13 A1 37 NC 61 DQ13
14 A2 38 NC 62 DQ30
15 A3 39 Vss 63 DQ14
16 A4 40 /CAS0 64 DQ31
17 A5 41 /CAS2 65 DQ15
18 A6 42 /CAS3 66 NC
19 NC 43 /CAS1 67 PD1
20 DQ4 44 /RAS0 68
PD2
21 DQ20 45 NC 69 PD3
22 DQ5 46 NC 70 PD4
23 DQ21 47
/WE
71
NC
24 DQ6 48 NC 72 Vss
PIN DESCRIPTION
PIN
A0 – A9
DQ0 – DQ31
FUNCTION
Address Inputs
Data Input/Output
PIN
PD1 – PD4
Vcc
FUNCTION
Presence Detect
Power (+5V)
/RAS0, /RAS2
Row Address Strobe
Vss Ground
/CAS0 - /CAS3
Column Address Strobe
NC No Connection
/WE Read/Write Enable
-
-
URL:www.hbe.co.kr
REV.1.0 (August.2002)
1 HANBiT Electronics Co., Ltd
1 page  
HANBit
tCAH
tRCD
tRAD
tRSH
tCSH
tCRP
tT
tREF
Column Address Hold Time
/RAS to /CAS Delay Time
/RAS to Column Address Delay Time
/RAS Hold Time
/CAS Hold Time
/CAS to /RAS Precharge Time
Transition Time (Rise and Fall)
Refresh Period (1024 Cycle)
READ CYCLE
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SYMBOL
PARAMETER
tRAC
tCAC
tAA
tRCS
tRCH
tRRH
tRAL
tOFF
Access Time from /RAS
Access Time from /CAS
Access Time from Column Address
Read Command Setup Time
Read Command Hold Time to /CAS
Read Command Hold Time to /RAS
Column Address to /RAS Lead Time
Output Buffer Turn-off Time
WRITE CYCLE
SYMBOL
PARAMETER
twcs
tWCH
tWP
tRWL
tCWL
tDS
tDH
Write Command Setup Time
Write Command Hold Time
Write Command Pulse Width
Write Command to /RAS Lead Time
Write Command to /CAS Lead Time
Data-in Setup Time
Data-in Hold Time
REFRESH CYCLE
SYMBOL
PARAMETER
tCRS
tCHR
/CAS Setup Time
(/CAS-before-/RAS Refresh Cycle)
/CAS Hold Time
(/CAS-before-/RAS Refresh Cycle)
10 -
20 45
15 30
15 -
60 -
5-
3 50
- 16
-6
MIN MAX
- 60
- 15
- 30
0-
0-
0-
30 -
- 15
-6
MIN MAX
0-
10 -
10 -
15 -
15 -
0-
10 -
-6
MIN MAX
10 -
10 -
HMD1M32M2G
15 - ns 9
20 52 ns 10
15 35 ns
18 - ns
70 - ns
5 - ns
3 50 ns 8
- 16 ms
-7
MIN MAX
- 70
- 18
- 35
0-
0-
0-
35 -
- 15
UNIT NOTE
ns 2,3
ns 3,4
ns 3,5,14
ns
ns 6
ns 6
ns
ns 7
-7
MIN MAX
0-
15 -
10 -
18 -
18 -
0-
15 -
UNIT NOTE
ns 11
ns
ns
ns
ns
ns 12
ns 12
-7
MIN MAX
UNIT NOTE
10 - ns
10 - ns
URL:www.hbe.co.kr
REV.1.0 (August.2002)
5 HANBiT Electronics Co., Ltd
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMD1M32M2G.PDF ] | |
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