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PDF HMD4M36M9EA Data sheet ( Hoja de datos )
| Número de pieza | HMD4M36M9EA | |
| Descripción | 16Mbyte(4Mx36) 72-pin SIMM | |
| Fabricantes | Hanbit Electronics | |
| Logotipo |  |
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HANBit
HMD4M36M9EG, HMD4M36M9EA
16Mbyte(4Mx36) 72-pin SIMM, EDO with Parity Mode, 2K/4K Ref. 5V
Part No. HMD4M36M9EG , HMD4M36M9EAG
GENERAL DESCRIPTION
The HMD4M36M9EG is a 4M x 36 bit dynamic RAM high-density memory module. The module HMD4M36M8E consists
of eight CMOS 4M x 4 bit DRAMs in 24-pin SOJ packages and one CMOS 4M x 4 bit Quad /CAS DRAM in 28-pin SOJ
package mounted on a 72-pin, double-sided, FR-4-printed circuit board.
A 0.1uF or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The module is a single In-
line memory module with edge connections and is intended for mounting in to 72-pin edge connector sockets.
All module components may be powered from a single 5V DC power supply and all inputs and outputs are TTL -compatible.
FEATURES
w Part Identification
PIN ASSIGNMENT
www.DataSheHeMt4DU4.cMo3m6M9E----2048 Cycles/32ms Ref. Solder
HMD4M36M9EG- 2048 Cycles/32ms Ref. Gold
HMD4M36M9EA----4096 Cycles/64ms Ref. Solder
HMD4M36M9EAG- 4096 Cycles/64ms Ref. Gold
w Access times : 50, 60ns
w High-density 16MByte design
w Single + 5V ±0.5V power supply
w JEDEC standard pinout
w EDO mode operation
w /CAS-before-/RAS refresh capability
w TTL compatible inputs and outputs
w FR4-PCB design
OPTIONS
MARKING
w Timing
PIN SYMBOL PIN SYMBOL PIN SYMBOL
1 Vss 25 DQ24 49 DQ9
2
DQ0
26
DQ7
50 DQ27
3 DQ18 27 DQ25 51 DQ10
4
DQ1
28
A7
52 DQ28
5 DQ19 29 A11 53 DQ11
6
DQ2
30
Vcc
54 DQ29
7 DQ20 31 A8 55 DQ12
8
DQ3
32
A9
56 DQ30
9 DQ21 33 NC 57 DQ13
10 Vcc 34 /RAS2 58 DQ31
11 NC 35 DQ26 59 Vcc
12 A0 36 DQ8 60 DQ32
13 A1 37 DQ17 61 DQ14
50ns access
-5
14 A2 38 DQ35 62 DQ33
60ns access
-6
15 A3 39 Vss 63 DQ15
16 A4 40 /CAS0 64 DQ34
w Packages
72-pin SIMM
M
17 A5 41 /CAS2 65 DQ16
18 A6 42 /CAS3 66 NC
19 A10 43 /CAS1 67
Vss
PRESENCE DETECT PINS
20 DQ4 44 /RAS0 68
PD2
Pin
PD1
PD2
PD3
50ns
Vss
NC
Vss
60ns
Vss
NC
NC
21 DQ22 45 NC 69 PD3
22 DQ5 46 NC 70 PD4
23 DQ23 47
/WE
71
NC
24 DQ6 48 NC 72 Vss
PD4
Vss
PERFORMANCE RANGE
Speed
tRAC
tCAC
5
50ns
13ns
6
60ns
15ns
NC
tRC
90ns
110ns
tHPC
26ns
30ns
A0-A11 : Address Input (4K Ref.)
A0-A10 : Address Input (2K Ref)
*Note:A11 is used for only HMD4M36M9EA
URL:www.hbe.co.kr
REV. 1.0. (August. 2002)
-1-
HANBit Electronics Co.,Ltd.
1 page  
HANBit
HMD4M36M9EG, HMD4M36M9EA
Column address hold time
tCAH
8
10
ns
Column Address to /RAS lead time
tRAL 25
30
ns
Read command set-up time
tRCS
0
0
ns
Read command hold referenced to /CAS
tRCH
0
0
ns
Read command hold referenced to /RAS
tRRH
0
0
ns
Write command hold time
tWCH
10
10
ns
Write command hold referenced to /RAS
tWCR
50
50
ns
Write command pulse width
tWP 10
10
ns
Write command to /RAS lead time
tRWL
13
15
ns
Write command to /CAS lead time
www.DataSheDeat4taU-.icnosmet-up time
tCWL
8
10
ns
tDS 0
0
ns
Data-in hold time
tDH 8 10 ns
Data-in hold referenced to /RAS
tDHR
50
50
ns
Refresh period
tREF 32 32 ns
Write command set-up time
tWCS
0
0
ns
/CAS setup time (C-B-R refresh)
tCSR
5
5
ns
/CAS hold time (C-B-R refresh)
tCHR
10
10
ns
/RAS precharge to /CAS hold time
tRPC
5
5
ns
Access time from /CAS precharge
tCPA 30 35 ns
Fast page mode cycle time
tPC 40
40
ns
/CAS precharge time (Fast page)
tCP 8 10 ns
/RAS pulse width (Fast page )
tRASP
50
200K 60
200K
ns
/W to /RAS precharge time (C-B-R refresh)
tWRP
10
10
ns
/W to /RAS hold time (C-B-R refresh)
tWRH
10
10
ns
/CAS precharge(C-B-R counter test)
NOTES
tCPT 20
20
ns
1.An initial pause of 200µs is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles
before proper device operation is achieved.
2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH(min) and VIL(max) and are assumed to be 5ns for all inputs.
3.Measured with a load equivalent to 2TTL loads and 100pF
4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD
is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC.
5.Assumes that tRCD ≥ tRCD(max)
6. tAR, tWCR, tDHR are referenced to tRAD(max)
7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to VOH
or VOL.
8. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter.
They are included in the data sheet as electrical characteristic only. If tWCS ≥ tWCS(min) the cycle is an early write
cycle and the data out pin will remain high impedance for the duration of the cycle.
9. Either tRCH or tRRH must be satisfied for a read cycle.
10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in read-
write cycles.
11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference
point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA.
URL:www.hbe.co.kr
REV. 1.0. (August. 2002)
-5-
HANBit Electronics Co.,Ltd.
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HMD4M36M9EA.PDF ] | |
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