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HMD8M32M16 PDF даташит

Спецификация HMD8M32M16 изготовлена ​​​​«Hanbit Electronics» и имеет функцию, называемую «32Mbyte(8Mx32) 72-pin F/P Mode».

Детали детали

Номер произв HMD8M32M16
Описание 32Mbyte(8Mx32) 72-pin F/P Mode
Производители Hanbit Electronics
логотип Hanbit Electronics логотип 

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HMD8M32M16 Даташит, Описание, Даташиты
HANBit
HMD8M32M16
32Mbyte(8Mx32) 72-pin F/P Mode 2K Ref. SIMM Design 5V
Part No. HMD8M32M16, HMD8M32M16G
GENERAL DESCRIPTION
The HMD8M32M16 is a 8M x 32 bit dynamic RAM high density memory module. The module consists of sixteen CMOS
4M x 4bit DRAMs in 24-pin SOJ packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1 or
0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM components. The module is a single
In-line Memory Module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All
module components may be powered from a single 5V DC power supply and all inputs and outputs are TTL-compatible.
www.DataShFeEetA4UT.cUoRmES
w Part Identification
HMD8M32M16--2048 Cycles/32ms Ref, Solder
HMD8M32M16G--2048 Cycles/32ms Ref, Gold
w Access times : 50, 60ns
w High-density 32MByte design
w Single + 5V ±0.5V power supply
w JEDEC standard pinout
w FP(Fast Page) mode operation
w TTL compatible inputs and outputs
w FR4-PCB design
OPTIONS
w Timing
50ns access
60ns access
w Packages
72-pin SIMM
MARKING
-5
-6
M
PERFORMANCE RANGE
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL
1 Vss 19 A10 37 NC 55 DQ11
2 DQ0 20 DQ4 38 NC 56 DQ27
3 DQ16 21 DQ20 39 Vss 57 DQ12
4 DQ1 22 DQ5 40 /CAS0 58 DQ28
5 DQ17 23 DQ21 41 /CAS2 59 Vcc
6 DQ2 24 DQ6 42 /CAS3 60 DQ29
7 DQ18 25 DQ22 43 /CAS1 61 DQ13
8 DQ3 26 DQ7 44 /RAS0 62 DQ30
9 DQ19 27 DQ23 45 /RAS1 63 DQ14
10 Vcc 28 A7 46 NC 64 DQ31
11 NC 29 NC(A11) 47 /W 65 DQ15
12 A0 30 Vcc 48 NC 66 NC
13 A1 31 A8 49 DQ8 67 PD1
14 A2 32 A9 50 DQ24 68 PD2
15 A3 33 /RAS1 51 DQ9 69 PD3
16 A4 34 /RAS0 52 DQ25 70 PD4
17 A5 35 NC 53 DQ10 71 NC
18 A6 36 NC 54 DQ26 72 Vss
SPEED tRAC tCAC tRC
-5 50ns 13ns 90ns
-6 60ns
PIN NAMES
15ns 110ns
Pin Name
Function
A0-A10
Address Input(2K Ref)
A0-A11
Address Input(4K Ref)
DQ0-DQ31
Data In/Out
/W Read/Write Input
tPC
35ns
40ns
SIMM TOP VIEW
Note: A11 is not used for HMD8M32M16
Pin Name
Function
/RAS0, /RAS1 Row Address Strobe
/CAS0 - /CAS3 Column Address Strobe
PD1 - PD4
Presence Detect
Pin Name
Vss
NC
Vcc
Function
Ground
No Connection
Power(+5V)
URL:www.hbe.co.kr
REV.1.0 (August.2002)
1 HANBit Electronics Co.,Ltd.









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HMD8M32M16 Даташит, Описание, Даташиты
HANBit
FUNCTIONAL BLOCK DIAGRAM
/CAS0
/RAS0
/CAS
DQ1
/RAS
U0 DQ2
/OE DQ3
/W A0-A10(A11). DQ4
/CAS1
www.DataSheet4U.com
/CAS
DQ1
/RAS
U1 DQ2
/OE DQ3
/W A0-A10(A11). DQ4
/CAS
DQ1
/RAS
U2 DQ2
/OE DQ3
/W A0-A10(A11). DQ4
/CAS2
/CAS
DQ1
/RAS
U3 DQ2
/OE DQ3
/W A0-A10(A11). DQ4
/CAS
DQ1
/RAS
U4 DQ2
/OE DQ3
/W A0-A10(A11). DQ4
/CAS3
/CAS
DQ1
/RAS
U5 DQ2
/OE DQ3
/W A0-A10(A11). DQ4
/CAS
DQ1
/RAS
U6 DQ2
/OE DQ3
/W A0-A10(A11). DQ4
/W
A0-A10
(A11)
URL:www.hbe.co.kr
REV.1.0 (August.2002)
/CAS
DQ1
/RAS
U7 DQ2
/OE DQ3
/W A0-A10(A11). DQ4
2
HMD8M32M16
DQ1
DQ2
DQ3
/CAS
U8 /RAS
/OE
DQ4 A0-A10(A11) /W
DQ1
DQ2
DQ3
/CAS
U9 /RAS
/OE
DQ4 A0-A10(A11) /W
DQ1
DQ2
DQ3
U10
/CAS
/RAS
/OE
DQ4 A0-A10(A11) /W
DQ1
DQ2
DQ3
U11
/CAS
/RAS
/OE
DQ4 A0-A10(A11) /W
DQ1
DQ2
DQ3
U12
/CAS
/RAS
/OE
DQ4 A0-A10(A11) /W
DQ1
DQ2
DQ3
U13
/CAS
/RAS
/OE
DQ4 A0-A10(A11) /W
DQ1
DQ2
DQ3
U14
/CAS
/RAS
/OE
DQ4 A0-A10(A11) /W
DQ1
DQ2
DQ3
DQ4
/CAS
U15 /RAS
/OE
A0-A10(A11) /W
/RAS1
HANBit Electronics Co.,Ltd.









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HMD8M32M16 Даташит, Описание, Даташиты
HANBit
HMD8M32M16
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
VIN ,OUT
Vcc
-1V to 7.0V
-1V to 7.0V
Power Dissipation
Storage Temperature
PD
TSTG
16W
-55oC to 150oC
Short Circuit Output Current
IOS 50mA
w Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.DataShReeEt4CUO.coMmMENDED DC OPERATING CONDITIONS
( Voltage reference to VSS, TA=0 to 70 o C )
PARAMETER
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
SYMBOL
Vcc
Vss
VIH
VIL
MIN
4.5
0
2.4
-1.0
TYP.
5.0
0
-
-
MAX
5.5
0
Vcc+1
0.8
UNIT
V
V
V
V
DC AND OPERATING CHARACTERISTICS
SYMBOL
SPEED
MIN
-5 -
ICC1
-6 -
ICC2
-
-5 -
ICC3
-6 -
-5 -
ICC4
-6 -
ICC5
-
-5 -
ICC6
-6 -
Il(L) -80
IO(L) -80
VOH 2.4
VOL -
ICC1 : Operating Current * (/RAS , /CAS , Address cycling @tRC=min.)
ICC2 : Standby Current ( /RAS=/CAS=VIH )
ICC3 : /RAS Only Refresh Current * ( /CAS=VIH, /RAS, Address cycling @tRC=min )
URL:www.hbe.co.kr
REV.1.0 (August.2002)
3
MAX
1760
1600
32
1760
1600
1440
1280
16
1760
1600
80
80
-
0.4
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
V
V
HANBit Electronics Co.,Ltd.










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