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PDF NTB5426N Data sheet ( Hoja de datos )
| Número de pieza | NTB5426N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTB5426N, NTP5426N
Power MOSFET
120 Amps, 60 Volts
N-Channel D2PAK, TO-220
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
Applications
www.Da•taPShoeweet4r US.ucpopmlies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Nonrepetitive
(TP < 10 ms)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC (Note 1)
Steady TC = 25°C
State
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
$20
30
120
85
215
260
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 70 A,
L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS 60
EAS 735
TL 260
Unit
V
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain)
Steady State (Note 1)
RqJC
0.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 0
1
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
6.0 mW @ 10 V
ID MAX
(Note 1)
120 A
N−Channel
D
G
S
4
4
12
3
12
3
TO−220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
5426N
AYWW
1
Gate
5426N
AYWW
31
Source Gate
2
Drain
3
Source
2
Drain
G
A
Y
WW
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTB5426N/D
1 page  
100
D = 0.5
10
0.2
0.1
1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
www.DataSheet4U.com
NTB5426N, NTP5426N
TYPICAL CHARACTERISTICS
Surface Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
1
10 100 1000
http://onsemi.com
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| PDF Descargar | [ Datasheet NTB5426N.PDF ] | |
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