DataSheet26.com

NTMFS4841N PDF даташит

Спецификация NTMFS4841N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTMFS4841N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

7 Pages
scroll

No Preview Available !

NTMFS4841N Даташит, Описание, Даташиты
NTMFS4841N
Power MOSFET
30 V, 57 A, Single N−Channel, SO−8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Device
Applications
CPU Power Delivery
DC−DC Converters
www.DataSheet4U.com
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
Steady
State
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
tp=10ms
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
TC = 25°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
ID
PD
IDM
30
20
13.1
9.5
2.17
8.3
6
0.87
57
41
41.7
115
V
V
A
W
A
W
A
W
A
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
TJ,
TSTG
IS
dV/dt
−55 to
+150
35
6
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 30 V, VGS = 10 V,
IL = 19 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
180 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
7.0 mW @ 10 V
11.4 mW @ 4.5 V
ID MAX
57 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
SD
S 4841N
S AYWWG
GGD
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4841NT1G
Package
SO−8FL
(Pb−Free)
Shipping
1500 /
Tape & Reel
NTMFS4841NT3G SO−8FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 0
1
Publication Order Number:
NTMFS4841N/D









No Preview Available !

NTMFS4841N Даташит, Описание, Даташиты
NTMFS4841N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
Value
3
57.7
143.4
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
www.DataZSehreoeGta4tUe.cVoolmtage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V to
11.5 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
Fall Time
tf
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.5
Typ Max Unit
V
25 mV/°C
1
10
±100
mA
nA
2.5 V
5.6 mV/°C
4.7 7.0
4.6
mW
9.2 11.4
8.5
16 S
1436
348
177
11.5
2.0
5.0
5.1
25.4
17
pF
nC
nC
13.5
66.5
ns
15.5
7.5
8.1
24.2
ns
22.8
5.7
http://onsemi.com
2









No Preview Available !

NTMFS4841N Даташит, Описание, Даташиты
NTMFS4841N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
0.9
0.8
20.5
11.6
8.9
10.7
1.2
Source Inductance
LS
Drain Inductance
Gate Inductance
www.DataSheet4U.com
Gate Resistance
LD
LG TA = 25°C
RG
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
0.93
0.005
1.84
3.2
Unit
V
ns
nC
nH
W
http://onsemi.com
3










Скачать PDF:

[ NTMFS4841N.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTMFS4841NPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск