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PDF NTD6600N Data sheet ( Hoja de datos )
| Número de pieza | NTD6600N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTD6600N
www.DataSheet4U.com
Power MOSFET
100 V, 12 A, N−Channel,
Logic Level DPAK
Features
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Avalanche Energy Specified
• Logic Level
• Pb−Free Package is Available
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Source Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
Drain Current − Continuous @ TA = 25°C
Drain Current − Continuous @ TA =100°C
Drain Current − Pulsed (Note 3)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
100 Vdc
100 Vdc
± 20 Vdc
12 Adc
9.0
44 Apk
56.6 W
0.38 W/°C
1.76 W
1.28 W
−55 to °C
+175
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc,
IL = 12 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance
− Junction to Case
− Junction to Ambient (Note 1)
− Junction to Ambient (Note 2)
Maximum Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
EAS 72 mJ
RqJC
RqJA
RqJA
TL
°C/W
2.65
85
117
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
http://onsemi.com
V(BR)DSS
100 V
RDS(on) TYP
118 mW @ 5.0 V
ID MAX
12 A
N−Channel
D
G
S
12
3
MARKING
DIAGRAMS
4
Drain
4 DPAK
CASE 369C
(Surface Mounted)
STYLE 2
1
Gate
2
Drain
3
Source
4
1
2
3
DPAK−3
CASE 369D
(Straight Lead)
STYLE 2
4
Drain
12 3
Gate Drain Source
NT6600
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 1
1
Publication Order Number:
NTD6600N/D
1 page  
NTD6600N
PACKAGE DIMENSIONS
www.DataSheet4U.com
B
VR
DPAK
CASE 369C−01
ISSUE O
−T−
SEATING
PLANE
C
E
S
F
4
1 23
A
K
J
LH
D 2 PL
G 0.13 (0.005) M T
U
Z
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
3.0
0.118
5.80
0.228
1.6 6.172
0.063 0.243
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.235 0.245
B 0.250 0.265
C 0.086 0.094
D 0.027 0.035
E 0.018 0.023
F 0.037 0.045
G 0.180 BSC
H 0.034 0.040
J 0.018 0.023
K 0.102 0.114
L 0.090 BSC
R 0.180 0.215
S 0.025 0.040
U 0.020 −−−
V 0.035 0.050
Z 0.155 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN MAX
5.97 6.22
6.35 6.73
2.19 2.38
0.69 0.88
0.46 0.58
0.94 1.14
4.58 BSC
0.87 1.01
0.46 0.58
2.60 2.89
2.29 BSC
4.57 5.45
0.63 1.01
0.51 −−−
0.89 1.27
3.93 −−−
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTD6600N.PDF ] | |
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