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NTB5404N PDF даташит

Спецификация NTB5404N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTB5404N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTB5404N Даташит, Описание, Даташиты
NTB5404N
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Power MOSFET
40 V, 136 A, Single N−Channel, D2PAK
Features
Low RDS(on)
High Current Capability
Low Gate Charge
This is a Pb−Free Device
Applications
Electronic Brake Systems
Electronic Power Steering
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current − RqJC (Note 1)
Power Dissipation −
RqJC (Note 1)
Steady
State
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (VDD = 50 V, VGS = 10 V, IPK = 45 A,
L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
VDSS
VGS
ID
PD
IDM
TJ,
TSTG
IS
EAS
TL
40 V
±20 V
136 A
96
167 W
258
−55 to
175
75
1000
A
°C
A
mJ
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction−to−Case (Drain)
RθJC
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
0.9 °C/W
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) TYP
3.5 mΩ @ 10 V
ID MAX
(Note 1)
136 A
N−Channel
D
G
S
MARKING
DIAGRAM
12
3
D2PAK
CASE 418B
STYLE 2
NTB5404NG
AYWW
1
NTB5404N
G
A
Y
WW
= Specific Device Code
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NTB5404NT4G
Package
D2PAK
(Pb−Free)
Shipping
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 0
1
Publication Order Number:
NTB5404N/D









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NTB5404N Даташит, Описание, Даташиты
NTB5404N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 100°C
VDS = 0 V, VGS = ±30 V
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V, ID = 40 A
VGS = 5.0 V, ID = 15 A
VDS = 10 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = 32 V
Total Gate Charge
QG(TOT)
Threshold Gate Charge
Gate−to−Source Charge
QG(TH)
QGS
VGS = 10 V, VDS = 32 V,
ID = 40 A
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 10 V, VDD = 32 V,
ID = 40 A, RG = 2.5 W
Fall Time
tf
SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 5 V, VDD = 20 V,
ID = 20 A, RG = 2.5 W
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 20 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dISD/dt = 100 A/ms,
tb IS = 20 A
Reverse Recovery Charge
QRR
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
40
1.5
Typ
34
−8.2
3.5
5.1
35
4300
1075
450
125
5.5
12.5
55
10
65
85
85
25
175
46
62
0.8
0.65
75
38
38
140
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Max Unit
1.0
10
±100
V
mV/°C
mA
nA
3.5 V
mV/°C
4.5 mW
7.0
S
7000
1700
1000
pF
nC
ns
ns
1.1 V
ns
nC
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2









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NTB5404N Даташит, Описание, Даташиты
NTB5404N
TYPICAL PERFORMANCE CURVES
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200
175
150
125
100
75
50
25
0
0
VGS = 8 V to 10 V
7V
6V
TJ = 25°C
5V
4.8 V
4.6 V
4.4 V
4.2 V
4V
3.8 V
1 23 45 67 89
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
10
200
VDS 10 V
175
150
125
100
75
50 TJ = 25°C
25
TJ = 125°C
TJ = −55°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.01
0.009
0.008
ID = 40 A
TJ = 25°C
0.007
0.006
0.005
0.004
0.003
0.002
345 6789
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
10
0.01
0.009
TJ = 25°C
0.008
0.007
0.006
VGS = 5 V
0.005
0.004
0.003
0.002
VGS = 10 V
0.001
20 30 40 50 60 70 80 90 100 110 120 130 140
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.2
ID = 40 A
2 VGS = 10 V
1.8
100000
VGS = 0 V
10000
TJ = 175°C
1.6
1.4 1000
1.2
TJ = 100°C
1 100
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
4 8 12 16 20 24 28 32 36 40
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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