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PDF NTB5405N Data sheet ( Hoja de datos )
| Número de pieza | NTB5405N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTB5405N, NVB5405N
Power MOSFET
40 V, 116 A, Single N−Channel, D2PAK
Features
• Low RDS(on)
• High Current Capability
• Low Gate Charge
• AEC−Q101 Qualified and PPAP Capable − NVB5405N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Electronic Brake Systems
• Electronic Power Steering
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current − RqJC
Power Dissipation −
RqJC
Steady
State
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Continuous Drain
Current − RqJA (Note 1)
Power Dissipation −
RqJA (Note 1)
Steady
State
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
ID
PD
IDM
TJ,
TSTG
40
±20
116
82
150
16.5
11.6
3.0
280
−55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (VDD = 50 V, VGS = 10 V, IPK = 40 A,
L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS
EAS
TL
75 A
800 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain)
RθJC
Junction−to−Ambient (Note 1)
RθJA
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1.0 °C/W
50 °C/W
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) TYP
4.9 mΩ @ 10 V
ID MAX
(Note 1)
116 A
N−Channel
D
G
S
MARKING
DIAGRAM
12
3
D2PAK
CASE 418B
STYLE 2
NTB5405NG
AYWW
1
NTB5405N
G
A
Y
WW
= Specific Device Code
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NTB5405NG
NTB5405NT4G
NVB5405NT4G
Package
D2PAK
(Pb−Free)
D2PAK
(Pb−Free)
D2PAK
(Pb−Free)
Shipping†
50 Units / Rail
800 / Tape & Reel
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 5
1
Publication Order Number:
NTB5405N/D
1 page  
NTB5405N, NVB5405N
TYPICAL PERFORMANCE CURVES
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
P(pk)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1 READ TIME AT t1
t2 TJ(pk) − TC = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
0.001
0.01
0.1
1.0
10
t, TIME (ms)
Figure 13. Thermal Response
http://onsemi.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTB5405N.PDF ] | |
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