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NTD5407N PDF даташит

Спецификация NTD5407N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTD5407N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTD5407N Даташит, Описание, Даташиты
NTD5407N
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Power MOSFET
40 V, 38 A, Single N−Channel, DPAK
Features
Low RDS(on)
High Current Capability
Low Gate Charge
These are Pb−Free Devices
Applications
Electronic Brake Systems
Electronic Power Steering
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current − RqJC (Note 1)
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation −
RqJC (Note 1)
Steady
State
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
IDM
TJ,
TSTG
40
±20
38
27
75
75
−55 to
175
V
V
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to Source Avalanche
Energy − (VDD = 50 V, VGS = 10 V, IPK = 17 A,
L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS
EAS
TL
36 A
150 mJ
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Units
Junction−to−Case (Drain)
RθJC
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2.0 °C/W
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V(BR)DSS
40 V
RDS(ON) TYP
21 mΩ @ 10 V
ID MAX
(Note 1)
38 A
N−Channel
D
G
S
4
12
3
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAM
1
YWW
54
07NG
Y
WW
5407N
G
= Year
= Work Week
= Specific Device Code
= Pb−Free Device
ORDERING INFORMATION
Device
Package
Shipping
NTD5407NG
DPAK
(Pb−Free)
75 Units / Rail
NTD5407NT4G DPAK 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 0
1
Publication Order Number:
NTD5407N/D









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NTD5407N Даташит, Описание, Даташиты
NTD5407N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 100°C
VDS = 0 V, VGS = ±30 V
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V, ID = 20 A
VGS = 5.0 V, ID = 10 A
VGS = 10 V, ID = 18 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = 32 V
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
QG(TOT)
QGS
QGD
VGS = 10 V, VDS = 32 V,
ID = 38 A
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 10 V, VDD = 32 V,
ID = 38 A, RG = 2.5 W
Fall Time
tf
SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 5 V, VDD = 20 V,
ID = 20 A, RG = 2.5 W
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 5.0 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 15 A
Reverse Recovery Charge
QRR
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
40
1.5
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Typ Max Unit
V
39 mV/°C
1.0
10
±100
mA
nA
3.5 V
−6.0 mV/°C
21 26 mW
32 40
15 S
615
1000
pF
173
80
20 nC
2.25
10.5
6.8 ns
17
66
51
10 ns
175
13
23
0.9 1.1 V
0.75
38 ns
20.5
17
40 nC
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NTD5407N Даташит, Описание, Даташиты
NTD5407N
TYPICAL PERFORMANCE CURVES
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60
VGS = 7 V to 10 V
TJ = 25°C
6V
50
5.5 V
40
5V
30
4.5 V
20
4V
10
0
01
23
45
67
3.5 V
8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
60
VDS 10 V
50
40
30
20
TJ = 100°C
10 TJ = 25°C
0 TJ = −55°C
01 2 3 4 5 6 78
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.08
0.07
0.06
ID = 38 A
TJ = 25°C
0.05
0.04
0.03
0.02
0.01
3 4 5 6 7 8 9 10 11
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
12
0.105
0.095 TJ = 25°C
0.085
0.075
0.065
0.055
VGS = 5 V
0.045
0.035
0.025
VGS = 10 V
0.015
0.005
10 15 20 25 30 35 40
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
ID = 20 A
1.8 VGS = 10 V
1.6
10000
VGS = 0 V
1000
TJ = 175°C
1.4
100
1.2
1
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
TJ = 100°C
1
5 10 15 20 25 30 35 40
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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