NTJD4158C PDF даташит
Спецификация NTJD4158C изготовлена «ON Semiconductor» и имеет функцию, называемую «Small Signal MOSFET». |
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Детали детали
Номер произв | NTJD4158C |
Описание | Small Signal MOSFET |
Производители | ON Semiconductor |
логотип |
8 Pages
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NTJD4158C
Small Signal MOSFET
30 V/−20 V, +0.25/−0.88 A,
Complementary, SC−88
Features
• Leading 20 V Trench for Low RDS(on) Performance
• ESD Protected Gate
• SC−88 Package for Small Footprint (2 x 2 mm)
Applications
• DC−DC Conversion
• Load/Power Management
• Load Switch
• Cell Phones, MP3s, Digital Cameras, PDAs
• This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
N−Ch
VDSS
30
P−Ch
−20
Gate−to−Source Voltage
N−Ch
VGS
±20
P−Ch
±12
N−Channel
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
ID
0.25
0.18
P−Channel
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
−0.88
−0.63
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
0.27
Pulsed Drain
Current
N−Ch
P−Ch
tp = 10 ms
IDM
0.5
−3.0
Operating Junction and Storage Temperature
TJ, Tstg −55 to
150
Source Current (Body Diode)
N−Ch
P−Ch
IS 0.25
−0.48
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max
Junction−to−Ambient – Steady State (Note 1)
RqJA
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
460
Unit
V
V
A
W
A
°C
A
°C
Unit
°C/W
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V(BR)DSS
N−Ch
30 V
P−Ch
−20 V
RDS(on) TYP
1.0 W @ 4.5 V
1.5 mW @ 2.5 V
215 mW @ −4.5 V
345 mW @ −2.5 V
ID MAX
0.25 A
−0.88 A
SC−88 (SOT−363)
(6−Leads)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
(Top View)
6
1
SC−88 (SOT−363)
CASE 419B
STYLE 26
MARKING DIAGRAM
& PIN ASSIGNMENT
1
Source−1
6
Drain−1
Gate−1
Gate−2
Drain−2
Source−2
(Top View)
TC = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTJD4158CT1G SC−88 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 0
1
Publication Order Number:
NTJD4158C/D
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NTJD4158C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol N/P
Test Condition
OFF CHARACTERISTICS (Note 3)
Drain−to−Source
Breakdown Voltage
V(BR)DSS
N
P
Drain−to−Source Breakdown
V(BR)DSS/ N
Voltage Temperature Coefficient
TJ
P
Zero Gate Voltage Drain Current
IDSS
N
P
N
P
Gate−to−Source Leakage Current
IGSS
N
P
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
N
P
Negative Gate Threshold
Temperature Coefficient
VGS(TH)/
TJ
N
P
Drain−to−Source On Resistance
RDS(on)
N
P
N
P
Forward Transconductance
gFS N
P
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 0 V
ID = 250 mA
ID = −250 mA
VGS = 0 V, VDS = 30 V
VGS = 0 V, VDS = −16 V
TJ = 25°C
VGS = 0 V, VDS = 30 V
VGS = 0 V, VDS = −16 V
TJ = 125°C
VDS = 0 V, VGS = 10 V
VDS = 0 V, VGS = −4.5 V
VGS = VDS
ID = 100 mA
ID = −250 mA
VGS = 4.5 V, ID = 10 mA
VGS = −4.5 V, ID = −0.88 A
VGS = 2.5 V, ID = 10 mA
VGS = −2.5 V, ID = −0.71 A
VDS = 3.0 V, ID = 10 mA
VDS = −10 V, ID = −0.88 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
VDS = 5.0 V
VDS = −20 V
f = 1 MHz, VGS = 0 V
VDS = 5.0 V
VDS = −20 V
VDS = 5.0 V
VDS = −20 V
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
VGS = −4.5 V, VDS = −10 V, ID = −0.88 A
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
VGS = −4.5 V, VDS = −10 V, ID = −0.88 A
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
VGS = −4.5 V, VDS = −10 V, ID = −0.88 A
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
VGS = −4.5 V, VDS = −10 V, ID = −0.88 A
VGS = 4.5 V, VDD = 5.0 V,
ID = 250 mA, RG = 50 W
VGS = −4.5 V, VDD = −10 V,
ID = −0.5 A, RG = 20 W
Forward Diode Voltage
VSD
N
P
VGS = 0 V, TJ = 25°C
N
P
VGS = 0 V, TJ = 125°C
Reverse Recovery Time
tRR N VGS = 0 V, dIS/dt = 8.0 A/ms
P VGS = 0 V, dIS/dt = 100 A/ms
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
IS = 10 mA
IS = −0.48 A
IS = 10 mA
IS = −0.48 A
IS = 10 mA
IS = −0.48 mA
Min
30
−20
0.8
−0.45
Typ wwMwa.DxataUShneitet4U.com
V
33 mV/
−9.0 °C
1.0 mA
1.0
0.5
0.5
1.0 mA
1.0
1.2 1.5 V
3.2
−2.7
1.0
0.215
1.5
0.345
0.08
3.0
1.5
0.260
2.5
0.500
mV/
°C
W
S
20 33 pF
155 225
19 32
25 40
7.25 12
18 30
0.9 1.5 nC
2.2 3.5
0.2
0.2
0.3
0.5
0.2
0.65
15 ns
66
56
78
5.8
6.5
13.5
3.5
0.65
−0.8
0.45
−0.66
12.4
TBD
0.7
−1.2
V
ns
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NTJD4158C
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 10 V to 2.8 V
VGS = 2.6 V
2.4 V
TJ = 25°C
2.2 V
0.2
VDS = 5 V
0.15
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2V
1.8 V
0.1
0.05
0.25 0.5
0.75
1
1.25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
1.5
0
1
TJ = 125°C
25°C
TJ = −55°C
1.25 1.5 1.75 2 2.25 2.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1.3
1.2 VGS = 4.5 V
TJ = 125°C
1.1
1.0
0.9
0.8 TJ = 25°C
0.7
0.6
0.5
0.4
0.005
TJ = −55°C
0.055
0.105
0.155
ID, DRAIN CURRENT (AMPS)
0.205
Figure 3. On−Resistance vs. Drain Current and
Temperature
2.5
TJ = 25°C
2.0
1.5
VGS = 2.5 V
1.0
VGS = 4 V
0.5
0
0.005
0.055
0.105
0.155
ID, DRAIN CURRENT (AMPS)
0.205
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
ID = 0.01 A
1.75 VGS = 4.5 V
1.5
1000
VGS = 0 V
1.25
TJ = 150°C
1 100
0.75
0.5
0.25
0
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
TJ = 125°C
10
0 5 10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTJD4158C | Small Signal MOSFET | ON Semiconductor |
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