NTMFS4108N PDF даташит
Спецификация NTMFS4108N изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTMFS4108N |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NTMFS4108N
Power MOSFET
30 V, 35 A, Single N−Channel,
SO−8 Flat Lead Package
Features
• Thermally and Electrically Enhanced Packaging Compatible with
Standard SO−8 Package Footprint
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG
• Optimized for Low Side Synchronous Applications
• High Speed Switching Capability
Applications
• Notebook Computer Vcore Applications
• Network Applications
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t v10 s
Steady
State
t v10 s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
$20
22
16
35
2.4
6.25
V
V
A
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
13.5 A
10
0.91 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ, Tstg
106
−55 to
150
A
°C
Continuous Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VGS = 10 V, IPK = 30 A,
L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS 6.0 A
EAS 450 mJ
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412″ sq.).
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V(BR)DSS
30 V
RDS(on) TYP
1.8 mW @ 10 V
2.7 mW @ 4.5 V
ID MAX
35 A
D
G
S
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 4108N
S AYWWG
GG
D
D
D
4108N = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4108NT1G SO−8 FL 1500 Tape / Reel
(Pb−Free)
NTMFS4108NT3G SO−8 FL 5000 Tape / Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 1
1
Publication Order Number:
NTMFS4108N/D
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NTMFS4108N
THERMAL RESISTANCE RATINGS
Rating
Junction−to−Ambient − Steady State (Note 3)
Junction−to−Ambient − t v10 s (Note 3)
Junction−to−Ambient − Steady State (Note 4)
Symbol
RqJA
RqJA
RqJA
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
30
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
TJ = 25°C
VGS = 0 V, VDS = 24 V TJ = 125°C
VDS = 0 V, VGS = 20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 4.5 V, ID = 19 A
VGS = 10 V, ID = 21 A
VDS = 15 V, ID = 10 A
1.0
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 24 V, ID = 21 A
VGS = 4.5 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
Forward Diode Voltage
VSD TJ = 25°C
VGS = 0 V, IS = 6.0 A TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 6.0 A
Reverse Recovery Charge
QRR
3. Surface−mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127″ sq. [1 oz] including traces).
4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412″ sq.).
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Max www.DaUtnaiStheet4U.com
53 °C/W
20
138
Typ Max Unit
V
21 mV/°C
1.0 mA
25
100 nA
2.5 V
7.5 mV/°C
2.7 3.4 mW
1.8 2.2
25 S
6000
1200
700
54
11
16
23
0.7
pF
nC
W
45 ns
60
70
140
0.72 1.1
0.65
41
20
21
45
V
ns
nC
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NTMFS4108N
40
3.5 V
VGS = 4 V to 10 V
30
TYPICAL PERFORMANCE CURVES
TJ = 25°C
3.4 V
3.3 V
40
VDS ≥ 10 V
30
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20 3.2 V
3.1 V
10
3.0 V
2.9 V
0
0 2 4 6 8 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
20
TJ = 125°C
10
TJ = 25°C
TJ = −55°C
0
123 4
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.007
0.006
0.005
0.004
0.003
0.002
0.001
ID = 10 A
TJ = 25°C
0.0035
0.003
0.0025
0.002
0.0015
0.001
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
0 0.0005
2 4 6 8 10 5 10 15 20 25 30
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
ID = 10 A
VGS = 10 V
2
1.5
1
0.5
100000
VGS = 0 V
10000
1000
100
TJ = 150°C
TJ = 100°C
0
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
3 6 9 12 15 18 21 24 27 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMFS4108N | Power MOSFET ( Transistor ) | ON Semiconductor |
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