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NTMFS4122N PDF даташит

Спецификация NTMFS4122N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTMFS4122N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTMFS4122N Даташит, Описание, Даташиты
NTMFS4122N
Power MOSFET
30 V, 23 A, Single N−Channel,
SO−8 Flat Lead
Features
Low RDS(on)
Low Inductance SO−8 Package
This is a Pb−Free Device
Applications
Notebooks, Graphics Cards
DC−DC Converters
Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
(Note 1 )
Steady
State
t v10 s
TA = 25°C
TA = 85°C
TA = 25°C
Power Dissipation (Note 1)
Steady
State
t v10 s
TA = 25°C
Continuous Drain Current
(Note 2)
Power Dissipation (Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
30
$20
14
10
23
2.2
5.8
9.1
6.5
0.9
68
−55 to
150
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 75 V, VGS = 10 V, IPK = 21 A, L = 1 mH,
RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS
EAS
TL
7.0 A
220 mJ
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA 56.3 °C/W
Junction−to−Ambient − t v10 s (Note 1)
RqJA
21.5
Junction−to−Ambient − Steady State (Note 2)
RqJA 141.6
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0264 in sq).
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V(BR)DSS
30 V
RDS(on) TYP
4.6 mW @ 10 V
6.3 mW @ 4.5 V
ID MAX
(Note 1)
23 A
D
G
S
MARKING
DIAGRAM
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
D
S
S 4122N
S AYWWG
GG
D
D
D
4122N = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMFS4122NT1G SO−8 FL 1500 Tape & Reel
(Pb−Free)
NTMFS4122NT3G SO−8 FL 5000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 2
1
Publication Order Number:
NTMFS4122N/D









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NTMFS4122N Даташит, Описание, Даташиты
NTMFS4122N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
TJ = 25°C
VGS = 0 V, VDS = 24 V TJ = 125°C
VDS = 0 V, VGS = 20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 12 A
VDS = 15 V, ID = 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
RG
VGS = 0 V, f = 1.0 MHz, VDS = 24 V
VGS = 4.5 V, VDS = 15 V, ID = 12 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 15 V,
ID = 1.0 A, RL = 15 W, RG = 3.0 W
Forward Diode Voltage
VSD TJ = 25°C
VGS = 0 V, IS = 7.0 A TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 7.0 A
Reverse Recovery Charge
QRR
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.0
Typ
23
6.6
4.6
6.3
13.2
2310
460
263
20
3.0
6.7
8.1
2.0
20
20
30
31
0.75
0.6
28
14
14
23
wMwawx .DataUSnhiteet4U.com
V
mV/°C
1.0 mA
10
100 nA
2.5 V
mV/°C
6.0 mW
8.5
S
pF
30 nC
W
ns
1.0 V
ns
nC
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NTMFS4122N Даташит, Описание, Даташиты
NTMFS4122N
TYPICAL PERFORMANCE CURVES
24
22
3.3 V
TJ = 25°C
20 VGS = 3.4 V to 10 V
18
3.2 V
16
14 3.1 V
12
10 3.0 V
8
6
4 2.8 V
2 2.6 V
0
0 0.5 1 1.5 2 2.5 3
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
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24
22 VDS = 30 V
20
18
16
14
12
10
8
6 TJ = 125°C
4 TJ = 25°C
2
0
12
TJ = −55°C
34
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.008
VGS = 10 V
0.007
0.006
0.005
TJ = 125°C
0.004
0.003
TJ = 25°C
0.002
0.001
TJ = −55°C
0
2 4 68
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current
0.008
0.007
TJ = 25°C
0.006
VGS = 4.5 V
0.005
0.004
0.003
VGS = 10 V
0.002
10 5
10 15 20 25 30
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1.7 ID = 14 A
1.6 VGS = 10 V
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
−50
−25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10000
VGS = 0 V
1000
TJ = 150°C
100 TJ = 100°C
10
150 3 6 9 12 15 18 21 24 27 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMFS4122NPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

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