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PDF NTD95N02R Data sheet ( Hoja de datos )
| Número de pieza | NTD95N02R | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD95N02R
Power MOSFET
95 A, 24 V, N−Channel DPAK
Features
• High Power and Current Handling Capability
• Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Gate Charge to Minimize Switching Losses
Applications
• CPU Motherboard Vcore Applications
• High Frequency DC−DC Converters
• Motor Drives
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TA = 25°C
Drain Current –
Continuous @ TA= 25°C, Limited by Package
Continuous @ TA= 25°C, Limited by Wires
Thermal Resistance − Junction−to− Ambient
(Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA= 25°C
Thermal Resistance − Junction−to−Ambient
(Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA= 25°C
Operating Junction and Storage Temperature
VDSS
VGS
RqJC
PD
ID
ID
RqJA
PD
ID
RqJA
PD
ID
TJ,
TSTG
24
±20
1.45
86
95
32
52
2.4
15.8
100
1.25
12
−55 to
150
Continuous Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy – (VDD = 25 V, VG = 10, IPK = 13 A,
L = 1 mH, RG= 25 W)
IS 45
EAS 84
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
TL 260
Unit
V
V
°C/W
W
A
A
°C/W
W
A
°C/W
W
A
°C
A
mJ
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
24 V
RDS(ON) TYP
4.5 mW @ 10 V
5.9 mW @ 4.5 V
ID MAX*
95 A
*ID MAX in the product summary table is continuous
and steady at 25°C.
D
G
S
4
4
12
3
DPAK−3
CASE 369C
1
2
3
DPAK−3
CASE 369D
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
13
Gate 2 Source
Drain
1
Gate
T95N02R = Device Code
Y = Year
WW = Work Week
2
Drain
3
Source
ORDERING INFORMATION
Device
Package
Shipping†
NTD95N02R
DPAK−3
75 Units/Rail
NTD95N02RT4 DPAK−3 2500 Tape & Reel
NTD95N02R−001
DPAK−3
Straight Lead
75 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 1
1
Publication Order Number:
NTD95N02R/D
1 page  
NTD95N02R
PACKAGE DIMENSIONS
DPAK−3 (SINGLE GAUGE)
CASE 369C−01
ISSUE O
B
VR
−T−
SEATING
PLANE
C
E
S
F
4
1 23
A
K
J
LH
D 2 PL
G 0.13 (0.005) M T
U
Z
SOLDERING FOOTPRINT
6.20
0.244
2.58
0.101
3.0
0.118
5.80
0.228
1.6 6.172
0.063 0.243
www.DataSheet4U.com
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.235 0.245
B 0.250 0.265
C 0.086 0.094
D 0.027 0.035
E 0.018 0.023
F 0.037 0.045
G 0.180 BSC
H 0.034 0.040
J 0.018 0.023
K 0.102 0.114
L 0.090 BSC
R 0.180 0.215
S 0.025 0.040
U 0.020 −−−
V 0.035 0.050
Z 0.155 −−−
MILLIMETERS
MIN MAX
5.97 6.22
6.35 6.73
2.19 2.38
0.69 0.88
0.46 0.58
0.94 1.14
4.58 BSC
0.87 1.01
0.46 0.58
2.60 2.89
2.29 BSC
4.57 5.45
0.63 1.01
0.51 −−−
0.89 1.27
3.93 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ǒ ǓSCALE 3:1
mm
inches
http://onsemi.com
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