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PDF NTMS4700N Data sheet ( Hoja de datos )

Número de pieza NTMS4700N
Descripción Power MOSFET ( Transistor )
Fabricantes ON Semiconductor　
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No Preview Available ! NTMS4700N Hoja de datos, Descripción, Manual

NTMS4700N
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Power MOSFET
30 V, 14.5 A, Single N−Channel, SO−8
Features
• Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG
• Optimized for High Side Control Applications
• High Speed Switching Capability
Applications
• Notebook Computer Vcore Applications
• Network Applications
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t v10 s
Steady
State
t v10 s
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
$20
11.5
9.2
14.5
1.56
2.5
V
V
A
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
ID
PD
8.6 A
6.8
0.86 W
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature
IDM
TJ, Tstg
40
−55 to
150
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VGS = 10 V, IPK = 7.5 A,
L = 10 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
IS 2.5 A
EAS 280 mJ
TL 260 °C
THERMAL RESISTANCE RATINGS
Rating
Symbol Value Unit
Junction−to−Lead − Steady State
RqJL
16 °C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
80
Junction−to−Ambient − t v10 s (Note 1)
RqJA
50
Junction−to−Ambient − Steady State (Note 2)
RqJA
145
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area 1.127 in sq. [1 oz] including traces).
2. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in sq.).
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
6.0 mW @ 10 V
7.3 mW @ 4.5 V
ID MAX
14.5 A
D
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
8
1
SO−8
CASE 751
STYLE 12
1
Source
Source
8
Drain
Drain
Source
Gate
Drain
Drain
(Top View)
4700N = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4700NR2 SO−8
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 0
1
Publication Order Number:
NTMS4700N/D

1 page




NTMS4700N pdf
NTMS4700N
PACKAGE DIMENSIONS
SO−8
CASE 751−07
ISSUE AB
−X−
A
B
−Y−
−Z−
H
85
S 0.25 (0.010) M Y M
1
4
K
G
D
C
SEATING
PLANE
N X 45 _
0.10 (0.004)
M
0.25 (0.010) M Z Y S X S
J
SOLDERING FOOTPRINT*
7.0
0.275
1.52
0.060
4.0
0.155
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NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0_ 8_ 0_ 8_
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
0.6
0.024
1.270
0.050
ǒ ǓSCALE 6:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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