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NTQD4154Z PDF даташит

Спецификация NTQD4154Z изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTQD4154Z
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTQD4154Z Даташит, Описание, Даташиты
NTQD4154Z
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Power MOSFET
20 V, 7.5 A, Common−Drain,
Dual N−Channel TSSOP−8
Features
Common Drain for Ease of Circuit Connection
Low RDS(on) Extending Battery Life
ESD Protected Gate
Applications
Li−Ion Battery Protection Circuit
Power Management in Portable and Battery−Powered Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 75°C
TA = 25°C
VDSS
VGS
ID
PD
20
±12
7.5
5.8
1.52
V
V
A
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
t 10 s
t 10 s
TA = 25°C
TA = 75°C
TA = 25°C
ID
PD
9.8 A
7.6
2.6 W
Pulsed Drain Current
tp = 10 µs
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
30
−55 to
150
2.2
260
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction−to−Ambient – Steady State
RθJA
82 °C/W
Junction−to−Ambient − t 10 s
RθJA
48
1. Mounted onto a 2square FR−4 board (1sq. 2 oz. cu. 0.06thick
single−sided), steady state.
2. Mounted onto a 2square FR−4 board (1sq. 2 oz. cu. 0.06thick
single−sided), t 10 secs.
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V(BR)DSS
20 V
RDS(on) TYP
15 mW @ 4.5 V
21 mW @ 2.5 V
ID MAX
7.5 A
N−Channel
D
N−Channel
D
250 W
G1
250 W
G2
S1 S2
TSSOP−8
8 CASE 948S
PLASTIC
1
MARKING DIAGRAM
& PIN ASSIGNMENT
D1
8
S1 2 54Z 7
S1
3
YWW
N
6
G1 4
5
Top View
54Z = Device Code
Y = Year
WW = Work Week
N = MOSFET
D
S2
S2
G2
ORDERING INFORMATION
Device
Package
Shipping
NTQD4154Z
TSSOP−8 100 Units/Rail
NTQD4154ZR2 TSSOP−8 4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 0
1
Publication Order Number:
NTQD4154Z/D









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NTQD4154Z Даташит, Описание, Даташиты
NTQD4154Z
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 µA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 16 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±4.5 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 µA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 4.5 V, ID = 7.5 A
VGS = 2.5 V, ID = 5.5 A
VGS = 10 V, ID = 7.5 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz,
VDS = 16 V
VGS = 4.5 V, VDS = 10 V,
ID = 7.5 A
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDD = 10 V,
ID = 7.5 A, RG = 6.0
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 6.5 A
Reverse Recovery Time
tRR
ta VGS = 0 V, dISD/dt = 100 A/ms
tb IS = 6.5 A
QRR
3. Pulse Test: pulse width 300 ms, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
20
0.6
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Typ Max Unit
V
12 mV/°C
1.0 mA
25
±1.0 mA
1.5 V
4.1 mV/°C
15 19 m
21 26
46 S
1485
220
175
21.5
4.0
6.0
5.5
pF
nC
0.2 ms
0.5
1.12
0.86
0.8 1.2 V
1.02 ms
0.32
0.7
11.6 mC
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NTQD4154Z Даташит, Описание, Даташиты
NTQD4154Z
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
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30 30
VGS = 10, 5 & 4 V
TJ = 25°C
VDS 10 V
24
3V
18
12
2V
1.8 V
6
1.6 V
0
01234 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
24
18
12
125°C
6
25°C
0 TJ = −55°C
0 0.5 1 1.5 2 2.5 3
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.0225
0.02
ID = 7.5 A
TJ = 25°C
0.05
0.04
TJ = 25°C
0.0175
0.015
0.03
0.02
VGS = 2.5 V
0.0125
0.01
VGS = 4.5 V
0.01
2.5 3.75 5 6.25 7.5 8.75 10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0
0 6 12 18 24 30
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
ID = 7.5 A
VGS = 4.5 V
1.5
100000
VGS = 0 V
10000
TJ = 150°C
1.0
1000
TJ = 125°C
0.5
0
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
0
4 6 12 16 20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTQD4154ZPower MOSFET ( Transistor )ON Semiconductor
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