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NTJD4152P PDF даташит

Спецификация NTJD4152P изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Trench Small signal MOSFET».

Детали детали

Номер произв NTJD4152P
Описание Trench Small signal MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTJD4152P Даташит, Описание, Даташиты
NTJD4152P
Trench Small Signal
MOSFET
20 V, 0.88 A, Dual P−Channel,
ESD Protected SC−88
Features
Leading Trench Technology for Low RDS(ON) Performance
Small Footprint Package (SC70−6 Equivalent)
ESD Protected Gate
Pb−Free Package is Available
Applications
Load/Power Management
Charging Circuits
Load Switching
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Steady
State
Steady
State
tv5s
tv5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
t 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ,
TSTG
−20
±12
−0.88
−0.63
0.272
0.141
−1.0
−0.72
0.35
0.181
±3.0
−55 to
150
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS −0.48
TL 260
Unit
V
V
A
W
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State
RqJA
460
Junction−to−Ambient − t v 5 s
RqJA
357
Junction−to−Lead – Steady State
RqJL
226
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), steady state.
2. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), t v 5 s.
°C/W
© Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 0
1
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http://onsemi.com
V(BR)DSS
−20 V
RDS(on) Typ
215 mW @ −4.5 V
345 mW @ −2.5 V
600 mW @ −1.8 V
ID Max
−0.88 A
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
SOT−363 (SC−88−6)
MARKING DIAGRAM
6
1
SOT−363 / SC−88
CASE 419B
STYLE 26
TK D
TK = Device Code
D = Date Code
PIN ASSIGNMENT
1
Source−1
6
Drain−1
Gate−1
Gate−2
Drain−2
Source−2
Top View
ORDERING INFORMATION
Device
Package
Shipping
NTJD4152PT1 SOT−363 3000 Units/Reel
NTJD4152PT1G SOT−363 3000 Units/Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTJD4152/D









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NTJD4152P Даташит, Описание, Даташиты
NTJD4152P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = −250 mA
VGS = 0 V, VDS = −16 V TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±4.5 V
VDS = 0 V, VGS = ±12 V
Gate Threshold Voltage
Drain−to−Source On Resistance
VGS(TH)
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = VDS, ID = −250 mA
VGS = −4.5 V, ID = −0.88 A
VGS = −2.5 V, ID = −0.71 A
VGS = −1.8 V, ID = −0.20 A
VDS = −10 V, ID = −0.88 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz,
VDS = −20 V
VGS = −4.5 V, VDS = −10 V,
ID = −0.88 A
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = −4.5 V, VDD = −10 V,
ID = −0.5 A, RG = 20 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = −0.48 A
TJ = 125°C
3. Pulse Test: pulse width 300ms, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
−20
−0.45
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Typ Max Unit
V
1.0 mA
0.5
0.03 1.0 mA
6.0
V
215 260 mW
345 500
600 1000
3.0 S
155 pF
25
18
2.2 nC
0.5
0.65
5.8 ns
6.5
13.5
3.5
−0.8
−0.66
−1.2
V
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NTJD4152P Даташит, Описание, Даташиты
NTJD4152P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
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1
0.75
VGS = −4.5, −3.5 & −2.5 V TJ = 25°C
−2 V
−1.75 V
0.5
−1.5 V
0.25
−1.25 V
0 −1 V
0 0.4 0.8 1.2 1.6 2
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
1
VDS −20 V
0.9
0.8
0.7
0.6
0.5
0.4
0.3 125°C
0.2
0.1
0
0
25°C
TJ = −55°C
0.5 1 1.5 2 2.5 3 3.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.3
VGS = −4.5 V
0.25
TJ = 125°C
0.2 TJ = 25°C
0.15
TJ = −55°C
0.1
0
0.25 0.5 0.75 1
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
2.5
TJ = 25°C
2.0
1.5
VGS = −1.8 V
1.0
0.5 VGS = −2.5 V
0 VGS = −4.5 V
0.4 0.5 0.6 0.7 0.8 0.9 1
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1.8
ID = −0.88 A
VGS = −4.5 V
1.6
1.4
1.2
10000
VGS = 0 V
1000
TJ = 150°C
1.0 TJ = 125°C
0.8
0.6 100
0.4
0.2
0
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
10
0 5 10 15 20
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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Номер в каталогеОписаниеПроизводители
NTJD4152PTrench Small signal MOSFETON Semiconductor
ON Semiconductor

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