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NTHD3100C PDF даташит

Спецификация NTHD3100C изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTHD3100C
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTHD3100C Даташит, Описание, Даташиты
NTHD3100C
Power MOSFET
Complementary, 20 V, +2.9 A /−3.2 A,
ChipFETt
Features
Complementary N Channel and P Channel MOSFET
Small Size, 40% Smaller than TSOP−6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Trench P−Channel for Low On Resistance
Low Gate Charge N−Channel for Test Switching
Pb−Free Package is Available
Applications
DC−to−DC Conversion Circuits
Load Switch Applications Requiring Level Shift
Drive Small Brushless DC Motors
Ideal for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Ch
P−Ch
VDSS
VGS
20
"12
"8.0
V
V
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t10s
Steady
State
t10s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
ID
ID
PD
2.9 A
2.1
3.9
−3.2 A
−2.3
−4.4
1.1 W
Pulsed Drain Current
(Note 1)
N−Ch
P−Ch
t = 10 ms
t = 10 ms
IDM
12 A
−13
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 seconds)
TJ,
TSTG
IS
TL
−55 to
150
1.1
260
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
Junction−to−Ambient − t 10 s (Note 1)
RqJA
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
113 °C/W
60 °C/W
© Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 0
1
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V(BR)DSS
N−Channel
20 V
P−Channel
−20 V
RDS(on) TYP
58 mW @ 4.5 V
77 mW @ 2.5 V
64 mW @ −4.5 V
85 mW @ −2.5 V
ID MAX
2.9 A
−3.2 A
D1 S2
G1 G2
S1
N−Channel MOSFET
D2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
Bottom View
Top View
C9 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NTHD3100CT1 ChipFET 3000/Tape & Reel
NTHD3100CT1G ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHD3100C/D









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NTHD3100C Даташит, Описание, Даташиты
NTHD3100C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol N/P
Test Conditions
OFF CHARACTERISTICS (Note 2)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
V(BR)DSS
N
P
VGS = 0 V
ID = 250 mA
ID = −250 mA
IDSS
N VGS = 0 V, VDS = 16 V
P VGS = 0 V, VDS = −16 V
TJ = 25 °C
N VGS = 0 V, VDS = 16 V
P VGS = 0 V, VDS = −16 V TJ = 125 °C
IGSS
N
VDS = 0 V, VGS = ±12 V
P VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
N
P
N
P
N
P
N
P
VGS = VDS
ID = 250 mA
ID = −250 mA
VGS = 4.5 V , ID = 2.9 A
VGS = −4.5 V , ID = −3.2 A
VGS = 2.5 V , ID = 2.3 A
VGS = −2.5 V, ID = −2.2 A
VDS = 10 V, ID = 2.9 A
VDS = −10 V , ID = −3.2 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Gate Charge
QGS
Gate−to−Drain “Miller” Charge
QGD
2. Pulse Test: pulse width v 250 ms, duty cycle v 2%.
N
P
N
P
N
P
N
P
N
P
N
P
N
P
VDS = 10 V
VDS = −10 V
f = 1 MHz, VGS = 0 V
VDS = 10 V
VDS = −10 V
VDS = 10 V
VDS = −10 V
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
VGS = −4.5 V, VDS = −10 V, ID = −3.2 A
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
VGS = −4.5 V, VDS = −10 V, ID = −3.2 A
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
VGS = −4.5 V, VDS = −10 V, ID = −3.2 A
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
VGS = −4.5 V, VDS = −10 V, ID = −3.2 A
Min
20
−20
0.6
−.45
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Typ Max Unit
V
1.0
−1.0
5.0
−5.0
±100
±100
mA
nA
1.2 V
−1.5
58 80
64 80
mW
77 115
85 110
6.0 S
8.0
165 pF
680
80
100
25
70
2.3 nC
7.4
0.2
0.6
0.4
1.4
0.7
2.5
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NTHD3100C Даташит, Описание, Даташиты
NTHD3100C
ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)
Parameter
Symbol N/P
Test Conditions
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
N
P
VGS = 4.5 V, VDD = 10 V,
ID = 2.9 A, RG = 2.5 W
VGS = −4.5 V, VDD = −10 V,
ID = −3.2 A, RG = 2.5 W
Forward Diode Voltage
VSD
N
P VGS = 0 V, TJ = 25 °C
Reverse Recovery Time
tRR N
P
Charge Time
Discharge Time
ta N
P VGS = 0 V,
tb N dIS / dt = 100 A/ms
P
Reverse Recovery Charge
QRR
N
P
3. Switching characteristics are independent of operating junction temperatures.
IS = 2.9 A
IS = −3.2 A
IS = 1.5 A
IS = −1.5 A
IS = 1.5 A
IS = −1.5 A
IS = 1.5 A
IS = −1.5 A
IS = 1.5 A
IS = −1.5 A
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Min Typ Max Unit
6.3 ns
10.7
9.6
1.5
5.8
11.7
16
12.4
0.8
−0.8
12.5
13.5
9.0
9.5
3.5
4.0
6.0
6.5
1.15
−1.2
V
ns
nC
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