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NTTFS5811NL PDF даташит

Спецификация NTTFS5811NL изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTTFS5811NL
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTTFS5811NL Даташит, Описание, Даташиты
NTTFS5811NL
Power MOSFET
40 V, 53 A, 6.4 mΩ
Features
Low RDS(on)
Low Capacitance
Optimized Gate Charge
These Devices are Pb--Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain--to--Source Voltage
Gate--to--Source Voltage
Continuous Drain
Current RθJA (Note 1)
TA = 25°C
TA = 100°C
Power Dissipation RθJA
(Note 1)
Continuous Drain
Current RθJC (Note 1)
Steady
State
TA = 25°C
TA = 100°C
TC = 25°C
TC = 100°C
Power Dissipation
RθJC (Note 1)
TC = 25°C
TC = 100°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ,
Tstg
40
±20
17
10
2.7
1.1
53
33
33
13
211
--55 to
+150
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain--to--Source
Avalanche Energy
L = 0.1 mH
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS
EAS
IAS
TL
53 A
65 mJ
36 A
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction--to--Case – Steady
State (Note 1)
RθJC
3.8 °C/W
Junction--to--Ambient – Steady
State (Note 1)
RθJA
47
1. Surface--mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
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V(BR)DSS
40 V
RDS(on) MAX
6.4 mΩ @ 10 V
10 mΩ @ 4.5 V
ID MAX
53 A
N--Channel MOSFET
D (5--8)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
SD
S 5811 D
S AYWWG D
GGD
5811
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping
NTTFS5811NLTAG WDFN8
1500 /
(Pb--Free) Tape & Reel
NTTFS5811NLTWG WDFN8
5000 /
(Pb--Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
May, 2010 -- Rev. 1
1
Publication Order Number:
NTTFS5811NL/D









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NTTFS5811NL Даташит, Описание, Даташиты
NTTFS5811NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate--to--Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain--to--Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V
ID = 20 A
VGS = 4.5 V
ID = 20 A
VDS = 5 V, ID = 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate--to--Source Charge
QGS
Gate--to--Drain Charge
QGD
Plateau Voltage
VGP
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 10 V, VDS = 32 V, ID = 10 A
VGS = 4.5 V, VDS = 32 V, ID = 10 A
VGS = 4.5 V, VDS = 32 V, ID = 10 A
Turn--On Delay Time
td(on)
Rise Time
tr
Turn--Off Delay Time
td(off)
Fall Time
tf
DRAIN--SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 32 V,
ID = 10 A, RG = 2.5 Ω
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 10 A
Reverse Recovery Charge
QRR
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
40
1.5
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Typ Max Unit
V
35 mV/°C
1.0
10
±100
mA
nA
1.7
--6
5.5
8.3
24.6
2.2 V
mV/°C
6.4 mΩ
10
S
1570
215
157
31
18
1
5
10
3
0.61
pF
nC
nC
V
Ω
11 ns
30
21
12
0.74
0.58
21
11
10
12
1.2 V
ns
nC
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NTTFS5811NL Даташит, Описание, Даташиты
NTTFS5811NL
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
100 10 V
80
60
4.6 V
VGS = 5 V
TJ = 25°C
4.2 V
4.0 V
3.8 V
40 3.6 V
3.4 V
20 3.2 V
3.0 V
0
012345
VDS, DRAIN--TO--SOURCE VOLTAGE (V)
Figure 1. On--Region Characteristics
100 VDS 10 V
80
60
40
TJ = 25°C
20
TJ = 125°C
TJ = --55°C
0
1234
VGS, GATE--TO--SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
5
0.016
0.014
0.012
ID = 20 A
TJ = 25°C
0.010
TJ = 25°C
0.008
VGS = 4.5 V
0.010
0.008
0.006
0.006
VGS = 10 V
0.004
2 4 6 8 10 12
VGS, GATE--TO--SOURCE VOLTAGE (V)
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
0.004
5
10 15 20 25 30 35 40 45 50 55
ID, DRAIN CURRENT (A)
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
2
1.8
ID = 20 A
VGS = 10 V
1.6
1.4
100,000
VGS = 0 V
10,000
TJ = 150°C
1.2
1
1,000
TJ = 125°C
0.8
0.6
--50 --25 0
100
25 50 75 100 125 150
5
15 25 35
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On--Resistance Variation with
Temperature
VDS, DRAIN--TO--SOURCE VOLTAGE (V)
Figure 6. Drain--to--Source Leakage Current
vs. Voltage
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