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PDF HMC902LP3E Data sheet ( Hoja de datos )
| Número de pieza | HMC902LP3E | |
| Descripción | GaAs pHEMT MMIC LOW NOISE AMPLIFIER | |
| Fabricantes | Hittite Microwave | |
| Logotipo |  |
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v01.0310
7
Typical Applications
This HMC902LP3E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC902LP3Ewww.DataSheet4U.com
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
Features
Low Noise Figure: 1.8 dB
High Gain: 19 dB
High P1dB Output Power: 16 dBm
Single Supply: +3.5 V @ 80 mA
Output IP3: +28 dBm
50 Ohm matched Input/Output
16 Lead 3x3mm SMT Package: 9mm2
General Description
The HMC902LP3E is a GaAs MMIC Low Noise
Amplifier housed in a leadless 3x3 mm plastic sur-
face mount package. The amplifier operates between
5 and 10 GHz, providing 19 dB of small signal
gain, 1.8 dB noise figure, and output IP3 of +28 dBm,
while requiring only 80 mA from a +3.5V supply. The
P1dB output power of +16 dBm enables the LNA to
function as a LO driver for balanced, I/Q or image
reject mixers. The HMC902LP3E also features
I/Os that are DC blocked and internally matched to
50 Ohms, making it ideal for high capacity microwave
radios and C-Band VSAT applications.
7-1
Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 80 mA [2]
Parameter
Min. Typ. Max.
Frequency Range
5 - 10
Gain [1]
17 19.5
Gain Variation over Temperature
0.01
Noise Figure [1]
1.8 2.2
Input Return Loss
12
Output Return Loss
15
Output Power for 1 dB Compression [1]
16
Saturated Output Power (Psat) [1]
17.5
Output Third Order Intercept (IP3)
28
Supply Current (Idd)
(Vdd = 3.5V, set Vgg2 = 0V, Vgg1 = 0V Typ.)
80 110
[1] Board loss removed from gain, power and noise figure measurement.
[2] Vgg1 = Vgg2 = open for normal, self-biased operation.
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 page  
7
v01.0310
HMC902LP3Ewww.DataSheet4U.com
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
Pin Descriptions
Pin Number
Function
1, 2, 5, 8,
11 - 13, 16
N/C
3 RFIN
4, 9 GND
Description
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to RF/
DC ground externally.
This pin is AC coupled
and matched to 50 Ohms
Package bottom has exposed metal ground paddle
that must be connected to RF/DC ground.
Optional gate control for amplifier. If left open, the amplifier
will run self-biased at standard current. Negative volt-
6, 7
Vgg1, Vgg2
age applied will reduce drain current. External capacitors
required, see application circuits herein.
10 RFOUT
This pin is AC coupled
and matched to 50 Ohms
Interface Schematic
14, 15
Vdd2, Vdd1
Power supply voltage for the amplifier. See assembly
for required external components.
7-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC902LP3E.PDF ] | |
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