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HMC903LP3E PDF даташит

Спецификация HMC903LP3E изготовлена ​​​​«Hittite Microwave» и имеет функцию, называемую «GaAs pHEMT MMIC LOW NOISE AMPLIFIER».

Детали детали

Номер произв HMC903LP3E
Описание GaAs pHEMT MMIC LOW NOISE AMPLIFIER
Производители Hittite Microwave
логотип Hittite Microwave логотип 

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HMC903LP3E Даташит, Описание, Даташиты
v00.0210
7
Typical Applications
This HMC903LP3E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC903LP3Ewww.DataSheet4U.com
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 6 - 17 GHz
Features
Low Noise Figure: 1.7 dB
High Gain: 18 dB
P1dB Output Power: 14 dBm
Single Supply Voltage: +3.5 V @ 80 mA
Output IP3: +25 dBm
50 Ohm matched Input/Output
16 Lead 3x3mm SMT Package: 9mm2
General Description
The HMC903LP3E is a self-biased GaAs MMIC Low
Noise Amplifier housed in a leadless 3x3 mm plastic
surface mount package. The amplifier operates
between 6 and 17 GHz, providing 18 dB of small
signal gain, 1.7 dB noise figure, and output IP3 of
+25 dBm, while requiring only 80 mA from a +3.5 V
supply. The P1dB output power of +14 dBm enables
the LNA to function as a LO driver for balanced, I/Q
or image reject mixers. The HMC903LP3E also fe-
atures I/Os that are DC blocked and internally mat-
ched to 50 Ohms, making it ideal for high capacity
microwave radios and VSAT applications.
7-1
Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 80 mA [2]
Parameter
Min.
Typ. Max. Min.
Typ.
Frequency Range
6 - 16
16 - 17
Gain [1]
17.5 18.5
18
Gain Variation over Temperature
0.012
0.012
Noise Figure [1]
1.7 2
2.2
Input Return Loss
12 11
Output Return Loss
12 14
Output Power for 1 dB Compression [1]
14.5
13
Saturated Output Power (Psat) [1]
16.5
16.5
Output Third Order Intercept (IP3)
25
25
Supply Current (Idd)
(Vdd = 3.5V, Vgg1 = Vgg2 = Open)
80 110
80
[1] Board loss removed from gain, power and noise figure measurement.
[2] Vgg1 = Vgg2 = Open for normal, self-biased operation
Max.
2.5
110
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]









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HMC903LP3E Даташит, Описание, Даташиты
v00.0210
Broadband Gain & Return Loss [1]
25
15
S21
5 S11
S22
-5
-15
-25
3 5 7 9 11 13 15 17 19
FREQUENCY (GHz)
HMC903LP3Ewww.DataSheet4U.com
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 6 - 17 GHz
Gain vs. Temperature [1]
24
22
20
18
16
14
+25C
+85C
-40C
12
10
6
8 10 12 14
FREQUENCY (GHz)
16
18
7
Input Return Loss vs. Temperature
0
-5
-10
-15
-20
-25
6
+25C
+85C
-40C
8 10 12 14 16 18
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-5
+25C
+85C
-40C
-10
-15
-20
-25
6
8 10 12 14 16 18
FREQUENCY (GHz)
Noise Figure vs. Temperature [1]
6
5
+25C
4 +85C
-40C
3
2
1
0
6 8 10 12 14 16
FREQUENCY (GHz)
18
Output IP3 vs. Temperature
30
25
20
15
+25C
+85C
-40C
10
5
6 8 10 12 14 16
FREQUENCY (GHz)
18
[1] Board loss removed from gain, power and noise figure measurement.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7-2









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HMC903LP3E Даташит, Описание, Даташиты
v00.0210
7
P1dB vs. Temperature [1]
25
20
15
10
5
0
6
+25C
+85C
-40C
8 10 12 14 16
FREQUENCY (GHz)
18
HMC903LP3Ewww.DataSheet4U.com
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 6 - 17 GHz
Psat vs. Temperature [1]
25
20
15
10
+25C
+85C
-40C
5
0
6 8 10 12 14 16
FREQUENCY (GHz)
18
7-3
Reverse Isolation vs. Temperature
0
-10
+25C
-20 +85C
-40C
-30
-40
-50
-60
6
8 10 12 14 16
FREQUENCY (GHz)
18
Power Compression @ 12 GHz [1]
24
20
16
12 Pout
Gain
8 PAE
4
0
-4
-20 -17 -14 -11 -8 -5 -2
INPUT POWER (dBm)
1
4
Gain, Noise Figure & Power vs.
Supply Voltage @ 12 GHz [1]
22
7
Gain, Output IP3 & Idd vs. Gate
Voltage @ 12 GHz [2][3]
30
120
20
6 25 Gain
100
IP3
18 5
20 80
16 4
15 60
14 3
10 40
12 2
10
15
Idd 20
8
00
0
3
3.5
4
-0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1
0
Vdd (V)
Vgg1, Vgg2 Gate Volltage (Vdc)
[1] Board loss removed from gain, power and noise figure measurement.
[2] Board loss removed from gain measurement
[3] Data taken at Vdd1 = Vdd2 = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]










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