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PDF NDP02N60Z Data sheet ( Hoja de datos )
| Número de pieza | NDP02N60Z | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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NDF02N60Z, NDP02N60Z,
NDD02N60Z
www.DataSheet4U.com
N-Channel Power MOSFET
600 V, 4.0 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF
NDP NDD Unit
Drain−to−Source Voltage
VDSS
600
V
Continuous Drain Current
RqJC
ID 2.4 2.4 2.2 A
(Note 1)
Continuous Drain Current
RqJC TA = 100°C
ID 1.6 1.6 1.4 A
(Note 1)
Pulsed Drain Current, VGS
IDM
10
10
@ 10 V
(Note 1)
9A
Power Dissipation RqJC
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, ID = 2.4 A
ESD (HBM)
(JESD 22−A114)
PD
VGS
EAS
Vesd
24 72
30
120
2500
57 W
V
mJ
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 17)
Peak Diode Recovery
VISO
dv/dt
4500
4.5 (Note 2)
V
V/ns
Continuous Source Current
(Body Diode)
IS
2.4 A
Maximum Temperature for
Soldering Leads
TL
260 °C
Operating Junction and
TJ, Tstg
Storage Temperature Range
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ISD = 2.4 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
http://onsemi.com
VDSS
600 V
RDS(on) (TYP) @ 1 A
4.0 W
N−Channel
D (2)
G (1)
S (3)
4
4
1 23
1 23
1 23
12
3
TO−220FP TO−220AB IPAK
DPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 1 STYLE 5 STYLE 2 STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 2
1
Publication Order Number:
NDF02N60Z/D
1 page  
100
VGS v 30 V
SINGLE PULSE
10 TC = 25°C
1
NDF02N60Z, NDP02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
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100 ms 10 ms
1 ms
10 ms
dc
100
VGS v 30 V
SINGLE PULSE
10 TC = 25°C
1
100 ms
1 ms
10 ms
dc
10 ms
0.1
0.01
0.1
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDD02N60Z
1000
0.1
0.01
0.1
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area NDF02N60Z
10
50% (DUTY CYCLE)
1
20%
10%
5%
0.1 2%
1%
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 14. Thermal Impedance (Junction−to−Case) for NDD02N60Z
100
RqJC = 2.2°C/W
Steady State
1E+02
1E+03
10 50% (DUTY CYCLE)
20%
10%
1 5.0%
2.0%
1.0%
0.1
0.01
1E−06
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD02N60Z
RqJA = 41°C/W
Steady State
1E+02
1E+03
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDP02N60Z.PDF ] | |
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