NDF03N60Z PDF даташит
Спецификация NDF03N60Z изготовлена «ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor». |
|
Детали детали
Номер произв | NDF03N60Z |
Описание | N-Channel Power MOSFET / Transistor |
Производители | ON Semiconductor |
логотип |
10 Pages
No Preview Available ! |
NDF03N60Z, NDP03N60Z,
NDD03N60Z
www.DataSheet4U.com
N-Channel Power MOSFET
600 V, 3.3 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF
NDP NDD Unit
Drain−to−Source Voltage
Continuous Drain Current
RqJC
Continuous Drain Current
RqJC TA = 100°C
Pulsed Drain Current, VGS
@ 10 V
VDSS
ID
ID
IDM
3.0
(Note 1)
1.9
(Note 1)
12
(Note 1)
600
3.0
1.9
12
2.6
1.65
10
V
A
A
A
Power Dissipation RqJC
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, ID = 3.0 A
ESD (HBM)
(JESD 22−A114)
PD
VGS
EAS
Vesd
25 78
30
100
3000
61 W
V
mJ
V
RMS Isolation Voltage (t =
0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 17)
Peak Diode Recovery
VISO
dv/dt
4500
4.5 (Note 2)
V
V/ns
Continuous Source Current
(Body Diode)
IS
3.0 A
Maximum Temperature for
Soldering Leads
TL
260 °C
Operating Junction and
TJ, Tstg
Storage Temperature Range
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ISD = 3.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
http://onsemi.com
VDSS
600 V
RDS(on) (TYP) @ 1.2 A
3.3 W
N−Channel
D (2)
G (1)
S (3)
4
4
1 23
1 23
1 23
12
3
TO−220FP TO−220AB IPAK
DPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 1 STYLE 5 STYLE 2 STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 3
1
Publication Order Number:
NDF03N60Z/D
No Preview Available ! |
NDF03N60Z, NDP03N60Z, NDD03N60Z
THERMAL RESISTANCE
Parameter
Symbol
Junction−to−Case (Drain)
NDP03N60Z
NDF03N60Z
NDD03N60Z
RqJC
Junction−to−Ambient Steady State
(Note 3) NDP03N60Z
(Note 3) NDF03N60Z
(Note 4) NDD03N60Z
(Note 3) NDD03N60Z−1
RqJA
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
VGS = 0 V, ID = 1 mA
Reference to 25°C,
ID = 1 mA
VDS = 600 V, VGS = 0 V
25°C
150°C
BVDSS
DBVDSS/
DTJ
IDSS
600
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 5)
Static Drain−to−Source
On−Resistance
VGS = ±20 V
VGS = 10 V, ID = 1.2 A
IGSS
RDS(on)
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = VGS, ID = 50 mA
VDS = 15 V, ID = 1.5 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
VDD = 300 V, ID = 3.0 A,
VGS = 10 V
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 3.0 A,
VGS = 10 V, RG = 5 W
Fall Time
VGS(th)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
3.0
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 3.0 A, VGS = 0 V
VSD
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, VDD = 30 V
IS = 3.0 A, di/dt = 100 A/ms
trr
Qrr
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
www.DataSheet4U.com
Value
1.6
5.0
2.0
51
51
40
80
Unit
°C/W
Typ Max Unit
V
0.6 V/°C
1 mA
50
±10 mA
3.3 3.6
4.5
2.0
W
V
S
312 pF
39
8
12 nC
2.5
6.1
6.0 W
9 ns
8
16
10
1.6 V
265 ns
0.9 mC
http://onsemi.com
2
No Preview Available ! |
NDF03N60Z, NDP03N60Z, NDD03N60Z
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.00.0
7.0 V
VGS = 10 V
6.5 V
6.0 V
5.5 V
5.0 V
5.0 10.0 15.0 20.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
4.0
3.5 VDS = 25 V
3.0
2.5
2.0
1.5
1.0 TJ = 150°C
TJ = 25°C
0.5 TJ = −55°C
25.0 0.0 3
456789
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
10
5.00
4.75
4.50
4.25
4.00
3.75
3.50
ID = 1.2 A
TJ = 25°C
5.00
4.75
4.50
4.25
4.00
3.75
3.50
3.25
VGS = 10 V
TJ = 25°C
3.25 3.00
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Region versus Gate−to−Source
Voltage
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
3.5
2.50
2.25
2.00
ID = 1.2 A
VGS = 10 V
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
1.15
1.10
ID = 1 mA
1.05
1.00
0.95
0.90
−50 −25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. BVDSS Variation with Temperature
http://onsemi.com
3
Скачать PDF:
[ NDF03N60Z.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NDF03N60Z | N-Channel Power MOSFET / Transistor | ON Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |