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NDP03N60Z PDF даташит

Спецификация NDP03N60Z изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв NDP03N60Z
Описание N-Channel Power MOSFET / Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NDP03N60Z Даташит, Описание, Даташиты
NDF03N60Z, NDP03N60Z,
NDD03N60Z
www.DataSheet4U.com
N-Channel Power MOSFET
600 V, 3.3 W
Features
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF
NDP NDD Unit
DraintoSource Voltage
Continuous Drain Current
RqJC
Continuous Drain Current
RqJC TA = 100°C
Pulsed Drain Current, VGS
@ 10 V
VDSS
ID
ID
IDM
3.0
(Note 1)
1.9
(Note 1)
12
(Note 1)
600
3.0
1.9
12
2.6
1.65
10
V
A
A
A
Power Dissipation RqJC
GatetoSource Voltage
Single Pulse Avalanche
Energy, ID = 3.0 A
ESD (HBM)
(JESD 22A114)
PD
VGS
EAS
Vesd
25 78
30
100
3000
61 W
V
mJ
V
RMS Isolation Voltage (t =
0.3 sec., R.H. 30%,
TA = 25°C) (Figure 17)
Peak Diode Recovery
VISO
dv/dt
4500
4.5 (Note 2)
V
V/ns
Continuous Source Current
(Body Diode)
IS
3.0 A
Maximum Temperature for
Soldering Leads
TL
260 °C
Operating Junction and
TJ, Tstg
Storage Temperature Range
55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ISD = 3.0 A, di/dt 100 A/ms, VDD BVDSS, TJ = +150°C
http://onsemi.com
VDSS
600 V
RDS(on) (TYP) @ 1.2 A
3.3 W
NChannel
D (2)
G (1)
S (3)
4
4
1 23
1 23
1 23
12
3
TO220FP TO220AB IPAK
DPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 1 STYLE 5 STYLE 2 STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
April, 2010 Rev. 3
1
Publication Order Number:
NDF03N60Z/D









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NDP03N60Z Даташит, Описание, Даташиты
NDF03N60Z, NDP03N60Z, NDD03N60Z
THERMAL RESISTANCE
Parameter
Symbol
JunctiontoCase (Drain)
NDP03N60Z
NDF03N60Z
NDD03N60Z
RqJC
JunctiontoAmbient Steady State
(Note 3) NDP03N60Z
(Note 3) NDF03N60Z
(Note 4) NDD03N60Z
(Note 3) NDD03N60Z1
RqJA
3. Insertion mounted
4. Surface mounted on FR4 board using 1sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
DraintoSource Leakage Current
VGS = 0 V, ID = 1 mA
Reference to 25°C,
ID = 1 mA
VDS = 600 V, VGS = 0 V
25°C
150°C
BVDSS
DBVDSS/
DTJ
IDSS
600
GatetoSource Forward Leakage
ON CHARACTERISTICS (Note 5)
Static DraintoSource
OnResistance
VGS = ±20 V
VGS = 10 V, ID = 1.2 A
IGSS
RDS(on)
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = VGS, ID = 50 mA
VDS = 15 V, ID = 1.5 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
VDD = 300 V, ID = 3.0 A,
VGS = 10 V
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
TurnOn Delay Time
Rise Time
TurnOff Delay Time
VDD = 300 V, ID = 3.0 A,
VGS = 10 V, RG = 5 W
Fall Time
VGS(th)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
3.0
SOURCEDRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 3.0 A, VGS = 0 V
VSD
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, VDD = 30 V
IS = 3.0 A, di/dt = 100 A/ms
trr
Qrr
5. Pulse Width 380 ms, Duty Cycle 2%.
www.DataSheet4U.com
Value
1.6
5.0
2.0
51
51
40
80
Unit
°C/W
Typ Max Unit
V
0.6 V/°C
1 mA
50
±10 mA
3.3 3.6
4.5
2.0
W
V
S
312 pF
39
8
12 nC
2.5
6.1
6.0 W
9 ns
8
16
10
1.6 V
265 ns
0.9 mC
http://onsemi.com
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NDP03N60Z Даташит, Описание, Даташиты
NDF03N60Z, NDP03N60Z, NDD03N60Z
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.00.0
7.0 V
VGS = 10 V
6.5 V
6.0 V
5.5 V
5.0 V
5.0 10.0 15.0 20.0
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
4.0
3.5 VDS = 25 V
3.0
2.5
2.0
1.5
1.0 TJ = 150°C
TJ = 25°C
0.5 TJ = 55°C
25.0 0.0 3
456789
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
10
5.00
4.75
4.50
4.25
4.00
3.75
3.50
ID = 1.2 A
TJ = 25°C
5.00
4.75
4.50
4.25
4.00
3.75
3.50
3.25
VGS = 10 V
TJ = 25°C
3.25 3.00
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnRegion versus GatetoSource
Voltage
ID, DRAIN CURRENT (A)
Figure 4. OnResistance versus Drain
Current and Gate Voltage
3.5
2.50
2.25
2.00
ID = 1.2 A
VGS = 10 V
1.75
1.50
1.25
1.00
0.75
0.50
0.25
50
25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
1.15
1.10
ID = 1 mA
1.05
1.00
0.95
0.90
50 25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. BVDSS Variation with Temperature
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NDP03N60ZN-Channel Power MOSFET / TransistorON Semiconductor
ON Semiconductor

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