NDF04N62Z PDF даташит
Спецификация NDF04N62Z изготовлена «ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor». |
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Детали детали
Номер произв | NDF04N62Z |
Описание | N-Channel Power MOSFET / Transistor |
Производители | ON Semiconductor |
логотип |
9 Pages
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NDF04N62Z, NDP04N62Z,
NDD04N62Z
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N-Channel Power MOSFET
620 V, 1.8 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol NDF NDP NDD Unit
Drain−to−Source Voltage
Continuous Drain Current
RqJC
Continuous Drain Current
RqJC, TA = 100°C
Pulsed Drain Current,
VGS @ 10V
Power Dissipation RqJC
(Note 1)
VDSS 620 V
ID 4.4 4.4 4.1 A
(Note 2)
ID 2.8 2.8 2.6 A
(Note 2)
IDM 18 18 16 A
(Note 2)
PD 28 96 83 W
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, ID = 4.0 A
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 14)
Peak Diode Recovery
VGS
EAS
Vesd
VISO
dv/dt
±30
120
4500
3000
−
V
mJ
V
−V
4.5 (Note 3)
V/ns
Continuous Source Current
(Body Diode)
IS
4.0 A
Maximum Temperature for
TL
300 °C
Soldering Leads, 0.063″
TPKG
260
(1.6 mm) from Case for
10 s Package Body for 10 s
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Limited by maximum junction temperature
3. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
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VDSS
620 V
RDS(ON) (TYP) @ 2 A
1.8 Ω
N−Channel
D (2)
G (1)
S (3)
4
4
1 23
1 23
1 23
12
3
TO−220FP TO−220AB IPAK
DPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 1 STYLE 5 STYLE 2 STYLE 2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 1
1
Publication Order Number:
NDF04N62Z/D
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NDF04N62Z, NDP04N62Z, NDD04N62Z
THERMAL RESISTANCE
Junction−to−Case (Drain)
Parameter
Junction−to−Ambient Steady State
NDP04N62Z
NDF04N62Z
NDD04N62Z
(Note 4) NDP04N62Z
(Note 4) NDF04N62Z
(Note 1) NDD04N62Z
(Note 4) NDD04N62Z−1
Symbol
RqJC
RqJA
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
VGS = 0 V, ID = 1 mA
Reference to 25°C,
ID = 1 mA
VDS = 620 V, VGS = 0 V
25°C
125°C
BVDSS
DBVDSS/
DTJ
IDSS
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 5)
Static Drain−to−Source
On−Resistance
VGS = ±20 V
VGS = 10 V, ID = 2.0 A
IGSS
RDS(on)
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = VGS, ID = 50 mA
VDS = 15 V, ID = 2.0 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
VDD = 310 V, ID = 4.0 A,
VGS = 10 V
Plateau Voltage
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 310 V, ID = 4.0 A,
VGS = 10 V, RG = 5 Ω
Fall Time
VGS(th)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGP
Rg
td(on)
tr
td(off)
tf
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 4.0 A, VGS = 0 V
VSD
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, VDD = 30 V
IS = 4.0 A, di/dt = 100 A/ms
trr
Qrr
4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
Min
620
3.0
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Value
1.3
4.4
1.5
50
50
38
80
Unit
°C/W
Typ Max Unit
V
0.6 V/°C
1 mA
50
±10 mA
1.8 2.0
4.5
3.3
W
V
S
535 pF
62
14
19 nC
3.9
10
6.4 V
4.7 W
12 ns
13
25
14
1.6 V
285 ns
1.3 mC
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NDF04N62Z, NDP04N62Z, NDD04N62Z
TYPICAL CHARACTERISTICS
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8
TJ = 25°C
6
15 V 10 V
7V
6.8 V
6.6 V
4 6.4 V
6.2 V
2 6.0 V
5.8 V
0 5.6 V
0 5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
8
VDS ≥ 30 V
6
4
TJ = 150°C
TJ = 25°C
2
0 TJ = −55°C
3 4 5678
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3.5 3
ID = 2 A
TJ = 25°C
3 TJ = 25°C
2.5
2.5
2 VGS = 10 V
2
1.5 1.5
1
5 6 7 8 9 10
VGS (V)
Figure 3. On−Resistance vs. Gate Voltage
2.6
ID = 2 A
VGS = 10 V
2
1.4
0.8
1
0.5 1 1.5
2 2.5 3 3.5 4
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.15
1.1
ID = 1 mA
1.05
1.0
0.95
0.2
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
0.9
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. BVDSS Variation with Temperature
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