|
|
PDF HMC755LP4E Data sheet ( Hoja de datos )
| Número de pieza | HMC755LP4E | |
| Descripción | GaAs MMIC 1 Watt Power Amplifier | |
| Fabricantes | Hittite Microwave | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HMC755LP4E (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
v01.0410
HMC755LP4Ewww.DataSheet4U.com
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
Typical Applications
The HMC755LP4E is Ideal for:
• Cellular/3G & LTE/4G
• WiMAX, WiBro & Fixed Wireless
• Military & SATCOM
9 • Test Equipment
Functional Diagram
Features
High Gain: 31 dB
High PAE: 28% @ +33 dBm Pout
Low EVM: 2.5% @ Pout = +25 dBm
with 54 Mbps OFDM Signal
High Output IP3: +43 dBm
Integrated Detector & Power Control
24 Lead 4x4mm QFN Package: 16mm2
General Description
The HMC755LP4E is a high gain, high linearity GaAs
InGaP HBT MMIC Power amplifier covering 2.3 to
2.8 GHz. The amplifier provides 31 dB of gain and
+33 dBm of saturated power from a single +5V
supply. The power control pins (VEN1, 2, 3) can be
used to reduce the RF output power/quiescent cur-
rent, or for full power down of the PA. The integrated
output power detector (VDET) is internally coupled
and requires no external components. For +25 dBm
OFDM output power (64 QAM, 54 Mbps), the HMC-
755LP4E achieves an error vector magnitude (EVM)
of only 2.5% making it ideal for WiMAX/LTE/4G Appli-
cations. The amplifier is packaged in a compact QFN
SMT package and requires a minimum of external
matching components.
9 - 296
Electrical Specifications, TA = +25 °C, Vcc1, 2, 3 = +5V, VEN1, 2, 3 = +5V, Vcs = +5V
Frequency Range
Parameter
Min.
Typ.
Max.
Units
2.3 - 2.8
GHz
Gain
28 31
dB
Gain Variation Over Temperature
0.05
dB/ °C
Input Return Loss
10 dB
Output Return Loss
7 dB
Output Power for 1dB Compression (P1dB)
28 31
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3) [1]
33 dBm
43 dBm
Error Vector Magnitude @ 2.5 GHz
(54 Mbps OFDM Signal @ +25 dBm Pout)
2.5 %
Supply Current (Icc1 + Icc2 + Icc3)
Control Current (Ien1 + Ien2 + Ien3)
Bias Current (Ics)
400 480 600 mA
16 mA
12 mA
[1] Two-tone output power of +25 dBm per tone, 1 MHz spacing.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 page  
v01.0410
9
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2, Vcc3)
Control Voltage (VEN1, 2, 3)
RF Input Power (RFIN)(Vcc = +5V)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 80 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
5.5V
Vcc +0.5
+5 dBm
150 °C
5.2 W
12.5 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC755LP4Ewww.DataSheet4U.com
GaAs MMIC 1 WATT
POWER AMPLIFIER, 2.3 - 2.8 GHz
Typical Supply Current vs.
Supply Voltage
Vcc (V)
Icq (mA)
4.5 430
5.0 480
5.5 530
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
HMC755LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
MSL Rating
MSL3 [2]
Package Marking [1]
H755
XXXX
9 - 300
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC755LP4E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HMC755LP4E | GaAs MMIC 1 Watt Power Amplifier | Hittite Microwave |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |