PDF HMC863 Data sheet ( Hoja de datos )

Número de pieza	HMC863
Descripción	GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER
Fabricantes	Hittite Microwave
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No Preview Available ! v00.1109 Typical Applications The HMC863 is ideal for: • Point-to-Point Radios 3 • Point-to-Multi-Point Radios • VSAT • Military & Space HMC863www.DataSheet4U.com GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Features Saturated Output Power: +28 dBm @ 18% PAE High Output IP3: +39 dBm High Gain: 27 dB DC Supply: +6V @ 375mA 50 Ohm Matched Input/Output Die Size: 2.41 x 0.95 x 0.1 mm Functional Diagram General Description The HMC863 is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates between 24 and 29.5 GHz. The HMC863 provides 27 dB of gain, and +27 dBm of saturated output power at 18% PAE from a +6V supply. The RF I/Os are DC bloc- ked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +6V, Idd = 375mA[1] Parameter Min. Typ. Max. Min. Frequency Range 24 - 27 Gain 24 27 22 Gain Variation Over Temperature 0.0375 Input Return Loss 17 Output Return Loss 15 Output Power for 1 dB Compression (P1dB) 24 27 23 Saturated Output Power (Psat) 28 Output Third Order Intercept (IP3)[2] 37 Total Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd= 375mA typical. [2] Measurement taken at +6V @ 375mA, Pout / Tone = +16 dBm 375 Typ. 27 - 29.5 25 0.05 11 11 26 27 38 375 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA 3 - 142 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 page v00.1109 3 Gain & Power vs. Supply Current @ 27 GHz 30 Gain (dB) 29 P1dB (dBm) Psat (dBm) 28 27 26 25 350 360 370 380 390 Idd (mA) 400 HMC863www.DataSheet4U.com GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Gain & Power vs. Supply Voltage @ 27 GHz 30 Gain (dB) 29 P1dB (dBm) Psat (dBm) 28 27 26 25 5 5.2 5.4 5.6 5.8 Vdd (V) 6 Power Dissipation 3 2.5 2 24 GHz 25 GHz 1.5 26 GHz 27 GHz 28 GHz 1 -18 -15 -12 -9 -6 -3 0 3 6 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 37.2 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +6.5V +26 dBm 150 °C 2.42W 26.9 °C/W -65 to 150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +5.0 375 +5.5 375 +6.0 375 Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 375mA at +5.5V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 3 - 146 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 Page

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