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PDF ZXMS6001N3 Data sheet ( Hoja de datos )
| Número de pieza | ZXMS6001N3 | |
| Descripción | 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET | |
| Fabricantes | Zetex Semiconductors | |
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ZXMS6001N3
60V N-channel self protected enhancement mode
INTELLIFETTM MOSFET
Summary
Continuous drain source voltage VDS = 60V
On-state resistance
675mΩ
Max nominal load current (a)
Min nominal load current (c)
Clamping Energy
1.1A (VIN = 5V)
0.7A (VIN = 5V)
550mJ
Description
Low input current self protected low side MOSFET intended for Vin=5V
applications. Monolithic over temperature, over current, over voltage
(active clamp) and ESD protected logic level functionality. Intended as
a general purpose switch.
Note:
The tab is connected to the source pin and must be electrically isolated
from the drain pin. Connection of significant copper to the drain pin is
recommended for best thermal performance.
S
S
D
Features
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input protection (ESD)
• Load dump protection (actively protects load)
• Low input current
Ordering information
Device
Package Part mark
ZXMS6001N3TA SOT223 ZXMS6001
Reel size
(inches)
7
SOT223
IN
Tape width
(mm)
12 embossed
Quantity
per reel
1,000
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
1 page  
www.DataSheet4U.com
ZXMS6001N3
Parameter
Symbol Min Typ Max Unit Conditions
Protection Functions (f)
Minimum input voltage VPROT 4 3.5
for over temperature
protection
V Ttrip>150°C
Maximum input voltage
for over temperature
protection
VPROT
7 6 V Ttrip>150°C
Thermal Overload Trip
Temperature
TJT
150 175
°C
Thermal hysteresis
8 °C
Unclamped single pulse
inductive energy
Tj=25°C
EAS
550
mJ ID(ISO)=0.7A, VDD=32V
Unclamped single pulse
inductive energy
Tj=150°C
EAS
200
mJ ID(ISO)=0.7A, VDD=32V
Inverse Diode
Source drain voltage
VSD
1 V VIN=0V, -ID=1.4A
f Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
350
300
V = 13.5V
DS
V = 5V
IN
250
200
150
100
50
0
012345
V - Input Voltage (V)
IN
Input Current v Input Voltage
3
Single Pulse = 300µs
2
V = 5V
IN
1
0
-40 -20
V = 12V
DS
0 20 40 60 80 100 120 140
Temperature (°C)
Current Limit v Temperature
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
5
www.zetex.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet ZXMS6001N3.PDF ] | |
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