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PDF ZXMS6004FF Data sheet ( Hoja de datos )
| Número de pieza | ZXMS6004FF | |
| Descripción | 60V N-channel self protected enhancement mode Intellifet MOSFET | |
| Fabricantes | Diodes Incorporated | |
| Logotipo |  |
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A Product Line of
Diodes Incorporated
www.DataSheet4U.com
ZXMS6004FF
60V N-channel self protected enhancement mode
Intellifet MOSFET
Summary
Continuous drain source voltage
On-state resistance
Nominal load current (VIN = 5V)
Clamping energy
60 V
500 mΩ
1.3 A
90mJ
Description
The ZXMS6004FF is a self protected low side MOSFET with logic level
input. It integrates over-temperature, over-current, over-voltage (active
clamp) and ESD protected logic level functionality. The ZXMS6004FF is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard MOSFETs are
not rugged enough.
Features
• Compact high power dissipation package
• Low input current
• Logic Level Input (3.3V and 5V)
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input Protection (ESD)
• High continuous current rating
S
D
IN
Pinout - top view
Ordering information
Device
ZXMS66004FFTA
Part mark
1K6
Reel size
(inches)
7
Tape width
(mm)
12 embossed
Quantity per reel
3,000 units
Issue 1 - December 2008
© Diodes Incorporated, 2008
1
www.zetex.com
www.diodes.com
1 page  
www.DataSheet4U.com
ZXMS6004FF
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter
Symbol Min Typ Max Unit Conditions
Static Characteristics
Drain-Source clamp voltage
Off-state drain Ccrrent
Off-state drain current
Input threshold voltage
Input current
Input current
Input current while over
temperature active
Static Drain-Source on-state
resistance
Static Drain-Source on-state
resistance
Continuous drain current(a)
Continuous drain cCurrent
(a)
Continuous drain current (b)
Continuous drain current (b)
Current limit
Current limit (c)
Dynamic characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS(AZ)
IDSS
IDSS
VIN(th)
IIN
IIN
RDS(on)
RDS(on)
ID
ID
ID
ID
ID(LIM)
ID(LIM)
td(on)
tr
td(off)
ff
60
0.7
0.9
1.0
1.2
1.3
0.7
1
65 70
500
1
1 1.5
60 100
120 200
220
400 600
350 500
1.7
2.2
5
10
45
15
V ID=10mA
nA VDS=12V, VIN=0V
μA VDS=36V, VIN=0V
V VDS=VGS, ID=1mA
μA VIN=+3V
μA VIN=+5V
μA VIN=+5V
mΩ VIN=+3V, ID=0.5A
mΩ VIN=+5V, ID=0.5A
A VIN=3V; TA=25°C
A VIN=5V; TA=25°C
A VIN=3V; TA=25°C
A VIN=5V; TA=25°C
A VIN=+3V,
A VIN=+5V
μs VDD=12V, ID=0.5A,
μs VGS=5V
μs
μs
Notes:
(d) The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This
allows the device to be used in the fully on state without interference from the current limit. The device is fully
protected at all drain currents, as the low power dissipation generated outside saturation makes current limit
unnecessary.
Issue 1 - December 2008
© Diodes Incorporated, 2008
5
www.zetex.com
www.diodes.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet ZXMS6004FF.PDF ] | |
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