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C2898 PDF даташит

Спецификация C2898 изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «NPN Transistor - 2sC2898».

Детали детали

Номер произв C2898
Описание NPN Transistor - 2sC2898
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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C2898 Даташит, Описание, Даташиты
2SC2898
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Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
IB
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Ratings
500
400
7
8
16
4
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C









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C2898 Даташит, Описание, Даташиты
2SC2898
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter sustain
voltage
Collector to emitter sustain
voltage
Symbol Min
VCEO(sus)
400
VCEX(sus)
400
Typ
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Fall time
Note: 1. Pulse test
V(BR)EBO
I CBO
I CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
t on
t stg
tf
7
15
7
Max Unit
—V
—V
—V
50 µA
50 µA
1.0 V
1.5 V
0.8 µs
2.0 µs
0.8 µs
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Test conditions
IC = 0.2 A, RBE = ,
L = 100 mH
IC = 8 A, IB1 = 1.6 A,
IB2 = –0.8 A, VBE = –5 V,
L = 180 µH, Clamped
IE = 10 mA, IC = 0
VCB = 400 V, IE = 0
VCE = 350 V, RBE =
VCE = 5 V, IC = 4 A*1
VCE = 5 V, IC = 8 A*1
IC = 4 A, IB = 0.8 A*1
IC = 8 A, IB1 = –IB2 = 1.6 A,
VCC 150 V
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
100
IC(peak)
10 IC(max)(Continuous)
1.0
0.1 Ta = 25°C, 1 Shot
0.01
1 3 10 30 100 300 1,000
Collector to emitter voltage VCE (V)
2









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C2898 Даташит, Описание, Даташиты
Collector Current Derating Rate
100
80
60
IS/B Limit Area
40
20
0 50 100 150
Case temperature TC (°C)
Reverse Bias Area of Safe Operation
20
16 300 V, 16 A
12
8
4
IB2 = –0.8 A
400 V,
8A
450 V,
1.5 A
0 100 200 300 400 500
Collector to emitter voltage VCE (V)
2SC2898
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Transient Thermal Resistance
10
3
1.0 10 ms–10 s
0.3
0.1 10 µs–10 ms
0.03
0.01
0.01
0.01
0.1
0.1
TC = 25°C
1.0 10 (s)
1.0 10 (ms)
Collector to Emitter Voltage vs.
Base to Emitter Resistance
600
IC = 1 mA
500
400
300
100 1 k 10 k 100 k 1 M
Base to emitter resistance RBE ()
3










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Номер в каталогеОписаниеПроизводители
C2898NPN Transistor - 2sC2898Hitachi Semiconductor
Hitachi Semiconductor

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