C2898 PDF даташит
Спецификация C2898 изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «NPN Transistor - 2sC2898». |
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Детали детали
Номер произв | C2898 |
Описание | NPN Transistor - 2sC2898 |
Производители | Hitachi Semiconductor |
логотип |
7 Pages
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2SC2898
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Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
IB
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Ratings
500
400
7
8
16
4
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
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2SC2898
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter sustain
voltage
Collector to emitter sustain
voltage
Symbol Min
VCEO(sus)
400
VCEX(sus)
400
Typ
—
—
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Fall time
Note: 1. Pulse test
V(BR)EBO
I CBO
I CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
t on
t stg
tf
7
—
—
15
7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max Unit
—V
—V
—V
50 µA
50 µA
—
—
1.0 V
1.5 V
0.8 µs
2.0 µs
0.8 µs
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Test conditions
IC = 0.2 A, RBE = ∞,
L = 100 mH
IC = 8 A, IB1 = 1.6 A,
IB2 = –0.8 A, VBE = –5 V,
L = 180 µH, Clamped
IE = 10 mA, IC = 0
VCB = 400 V, IE = 0
VCE = 350 V, RBE = ∞
VCE = 5 V, IC = 4 A*1
VCE = 5 V, IC = 8 A*1
IC = 4 A, IB = 0.8 A*1
IC = 8 A, IB1 = –IB2 = 1.6 A,
VCC ≅ 150 V
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
100
IC(peak)
10 IC(max)(Continuous)
1.0
0.1 Ta = 25°C, 1 Shot
0.01
1 3 10 30 100 300 1,000
Collector to emitter voltage VCE (V)
2
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Collector Current Derating Rate
100
80
60
IS/B Limit Area
40
20
0 50 100 150
Case temperature TC (°C)
Reverse Bias Area of Safe Operation
20
16 300 V, 16 A
12
8
4
IB2 = –0.8 A
400 V,
8A
450 V,
1.5 A
0 100 200 300 400 500
Collector to emitter voltage VCE (V)
2SC2898
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Transient Thermal Resistance
10
3
1.0 10 ms–10 s
0.3
0.1 10 µs–10 ms
0.03
0.01
0.01
0.01
0.1
0.1
TC = 25°C
1.0 10 (s)
1.0 10 (ms)
Collector to Emitter Voltage vs.
Base to Emitter Resistance
600
IC = 1 mA
500
400
300
100 1 k 10 k 100 k 1 M
Base to emitter resistance RBE (Ω)
3
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Номер в каталоге | Описание | Производители |
C2898 | NPN Transistor - 2sC2898 | Hitachi Semiconductor |
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