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7WBD3126 PDF даташит

Спецификация 7WBD3126 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «2-Bit Translating Bus Switch».

Детали детали

Номер произв 7WBD3126
Описание 2-Bit Translating Bus Switch
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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7WBD3126 Даташит, Описание, Даташиты
7WBD3126
2-Bit Translating Bus
Switch
The 7WBD3126 is an advanced high−speed low−power 2−bit
translating bus switch in ultra−small footprints.
Features
High Speed: tPD = 0.25 ns (Max) @ VCC = 4.5 V
3 W Switch Connection Between 2 Ports
Power Down Protection Provided on Inputs
Zero Bounce
TTL−Compatible Control Inputs
Ultra−Small Pb−Free Packages
These are Pb−Free Devices
http://onsemi.com
MARKING
DIAGRAMS
8
1
UDFN8
MU SUFFIX
CASE 517AJ
AGM
G
UDFN8
1.95 x 1.0
CASE 517CA
1
XM
8
Micro8]
DM SUFFIX
CASE 846A
D125
AYWG
G
1
18
UQFN8
MU SUFFIX
CASE 523AN
1
AF M*G
G
US8
US SUFFIX
CASE 493
8
AD M*G
G
1
A = Assembly Location
Y = Year
W = Work Week
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 2
1
Publication Order Number:
7WBD3126/D









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7WBD3126 Даташит, Описание, Даташиты
7WBD3126
OE1 1
8 VCC
A1 2
7 OE2
B2 3
6 B1
GND 4
5 A2
Figure 1. UDFN8
(Top Thru−View)
OE1 A1 B2
7 65
VCC
8
4 GND
1 23
OE2 B1 A2
Figure 2. UQFN8
(Top Thru−View)
OE1
A1
B2
GND
1
2
3
4
8 VCC
7 OE2
6 B1
5 A2
Figure 3. US8/Micro8
(Top View)
A1 B1 FUNCTION TABLE
OE1
Input OEn
L
A2 B2 H
OE2
Figure 4. Logic Diagram
Function
Disconnect
Bn = An
http://onsemi.com
2









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7WBD3126 Даташит, Описание, Даташиты
7WBD3126
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VIN
VI/O
IIK
IOK
IO
ICC
IGND
TSTG
TL
TJ
qJA
DC Supply Voltage
Control Pin Input Voltage
Switch Input / Output Voltage
Control Pin DC Input Diode Current
Switch I/O Port DC Diode Current
ON−State Switch Current
Continuous Current Through VCC or GND
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
VIN < GND
VI/O < GND
US8 (Note 1)
UDFN8
UQFN8
Micro8
−0.5 to +7.0
−0.5 to +7.0
−0.5 to +7.0
−50
−50
$128
$150
$150
$150
−65 to +150
260
150
251
111
208
392
V
V
V
mA
mA
mA
mA
mA
mA
°C
°C
°C
°C/W
PD Power Dissipation in Still Air at 85°C
US8
UDFN8
UQFN8
Micro8
498
1127
601
319
mW
MSL
Moisture Sensitivity
Level 1
FR
VESD
Flammability Rating Oxygen Index: 28 to 34
ESD Withstand Voltage
Human Body Mode (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
UL 94 V−0 @ 0.125 in
> 2000
> 200
N/A
V
ILATCHUP
Latchup Performance Above VCC and Below GND at 125°C (Note 5)
$200
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
VCC
VIN
VI/O
TA
Dt/DV
Positive DC Supply Voltage
Control Pin Input Voltage
Switch Input / Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
Control Input
Switch I/O
4.0 5.5 V
0 5.5 V
0 5.5 V
−55
+125
°C
0 5 nS/V
0 DC
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
http://onsemi.com
3










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