CHA6518 PDF даташит
Спецификация CHA6518 изготовлена «United Monolithic Semiconductors» и имеет функцию, называемую «5 - 18 GHz High Power Amplifier». |
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Детали детали
Номер произв | CHA6518 |
Описание | 5 - 18 GHz High Power Amplifier |
Производители | United Monolithic Semiconductors |
логотип |
8 Pages
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www.DataSheet4U.com
CHA6518
RoHS COMPLIANT
5 – 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6518 is a monolithic three-stage
GaAs high power amplifier designed for
wide band applications.
This device is manufactured using a UMS
0.25 µm Power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
• the backside of the chip is both RF and
DC grounded
• bond pads and back side are gold plated
for compatibility with eutectic die attach
method and thermosonic or
thermocompression bonding process.
Main Features
n 0.25 µm Power pHEMT Technology
n 5 – 18 GHz Frequency Range
n 2W Output Power
n 24 dB nominal Gain
n Quiescent Bias point : 8V ; 1A
n Chip size: 5.23 mm x 3.26 mm x
0.07 mm
Vg Vd
Vg Vg Vd
50Ω Input
matching
IN
Inter-
stage
Stage 1 /
Stage 2
Inter-
stage
Stage 2 /
Stage 3
Output 50Ω
combiner
OUT
Vd
Main Characteristics
Vg Vd
Vd = 8 V
Tamb = +25°C (Tamb is the back-side of the chip)
Symbol
Parameter
F_op Operating frequency range
P_sat Saturated output power
G_lin Linear gain
Vg Vd
Min Typ Max Unit
5 18 GHz
33.5 dBm
24 dB
Ref. : DSCHA65185007 - 7 Jan 05
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
No Preview Available ! |
5 – 18 GHz High Power Amplifier
CHA6518www.DataSheet4U.com
Electrical Characteristics
Tamb = 25°C (2), Vd=8V, Ic (Quiescient) = 1A, CW biasing mode
Symbol
F_op
G_lin_1
G_lin_T
RL_in
RL_out
P_sat_1
P_sat_2
P_sat_3
P_sat_4
P_sat_5
P_sat_6
P_sat_7
PAE_sat
Vd
Id
Vg
Top
NF
Parameter
Operating frequency
Linear gain
Linear gain variation versus temperature
Input Return Loss
Output Return Loss
Saturated output power (5 to 6 GHz)
Saturated output power (6 to 7 GHz)
Saturated output power (8 to 10 GHz)
Saturated output power (11 to 12 GHz)
Saturated output power (13 to 14 GHz)
Saturated output power (15 to 17 GHz)
Saturated output power (18 GHz)
Power Added Efficiency in saturation
Positive supply voltage
Power supply quiescent current (1)
Negative supply voltage
Operating temperature range (2)
Noise Figure
Min
5
20
5.5
3.5
32.5
33
32.5
32
32.5
33
32
11
-30
Typ
24
-0.045
10
10
33
34
33
32.5
33
34
32.5
20
8
1
-0.8
5
Max
18
+80
(1) This parameter is fixed by gate voltage Vg
(2) The reference is the back-side of the chip
Absolute Maximum Ratings (1)
Unit
GHz
dB
dB/°C
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
%
V
A
V
°C
dB
Symbol
Parameter
Values
Unit
Pin (2)
Input continuous power
17 dBm
Vd (2)
Positive supply voltage without RF power
9V
Id (2)
Positive supply quiescent current
1.5 A
Ig (2)
Gate supply current
88 mA
Pd (2)
Power dissipation
13.5 W
Tj Junction temperature
175 °C
Tstg Storage temperature range
-55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) These values are specified for Tamb = 25°C
Ref. DSCHA65185007 - 7 Jan 05
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
No Preview Available ! |
5 – 18 GHz High Power Amplifier
CHA6518www.DataSheet4U.com
Typical measured characteristics
Measurements in test fixture :
Tamb=25°C, Vd=8V, Id (Quiescient) = 1A, CW Biasing mode, Pin=13dBm
CHA6518 : Maximum Output Power @ 25°C
38
37
36
35
34
33
32
31
30
29
28
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
Freq (GHz)
CHA6518 : Power Added Efficieny @ 25°C
40
35
30
25
20
15
10
5
0
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
Freq (GHz)
Ref. DSCHA65185007 - 7 Jan 05
3/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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