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NCP693 PDF даташит

Спецификация NCP693 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «1A CMOS Low-Dropout Voltage Regulator».

Детали детали

Номер произв NCP693
Описание 1A CMOS Low-Dropout Voltage Regulator
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NCP693 Даташит, Описание, Даташиты
NCP693
1A CMOS Low-Dropout
Voltage Regulator
The NCP693 series of fixed output low dropout linear regulators are
designed for portable battery powered applications with high output
current requirement up to 1 A. Each device contains a voltage
reference unit, an error amplifier, a PMOS power transistor, resistors
for setting output voltage, a current limit circuits for overcurrent and
thermalshutdown. A standby mode with ultra low supply current can
be realized with the chip enable function.
The device is housed in the DFN 1.8x2, 0.50P surface mount
package. Standard voltage versions are 0.8 V, 1.0 V, 1.2 V, 2.5 V and
3.3 V.
Features
Maximum Operating Voltage of 6.5 V
Low Output Voltage Option down to 0.8 V
High Accuracy Output Voltage of 1.0%
Builtin Auto Discharge Function for D Version
These are PbFree Devices
Typical Applications
Battery Powered Instruments
HandHeld Instruments
Camcorders and Cameras
Portable communication equipments
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MARKING
DIAGRAM
UDFN6, 1.8x2, 0.5P
CASE 517BA
XXX
XMM
1
XXXX = Specific Device Code
MM = Lot Number
PIN DESCRIPTION
Vout 1
Vout 2
GND 3
6 Vin
5 Vin
4 CE
(Top View)
16
25
34
(Top View)
ORDERING AND MARKING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
September, 2009 Rev. 0
1
Publication Order Number:
NCP639/D









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NCP693 Даташит, Описание, Даташиты
NCP693
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Vin
Vout
Vin
Vin
Vout
Vin
Vout
Vout
Vref
Current Limit &
CE Thermal Shutdown
GND
CE
Vref
Current Limit &
Thermal Shutdown
Version H (NCP693HMNxxTCG)
Version D (NCP693DMNxxTCG)
Figure 1. Internal Block Diagram
GND
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Description
1 Vout Regulated output voltage.
2 Vout Regulated output voltage.
3
GND
Power supply ground.
4 CE This input is used to place the device into lowpower standby. When this input is pulled low, the device
is disabled. If this function is not used, Enable should be connected to Vin.
5 Vin Positive power supply input voltage.
6 Vin Positive power supply input voltage.
EP
GND
Power supply ground.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage
Vin 7 V
Enable Voltage
VCE
0.3 to Vin
V
Output Voltage
Vout 0.3 to Vin + 0.3 V
Operating Junction Temperature
TJ
+150
°C
Operating Ambient Temperature
TA
40 to +85
°C
Storage Temperature
Tstg
55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per (JEDEC 22A114B)
Machine Model Method 200 V
THERMAL CHARACTERISTICS
Rating
Symbol
Test Conditions
Typical Value
Unit
JunctiontoAmbient
PSIJLead 2
RqJA
YJL2
1 oz Copper Thickness, 100 mm2
1 oz Copper Thickness, 100 mm2
114
25
°C/W
°C/W
Power Dissipation
PD
880 mW
NOTE: Single component mounted on an 80 x 80 x 1.5 mm FR4 PCB with stated copper head spreading area. Using the following
boundary conditions as stated in EIA/JESD 511, 2, 3, 7, 12.
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NCP693 Даташит, Описание, Даташиты
NCP693
ELECTRICAL CHARACTERISTICS (Vin = Vout(nom) + 1.0 V, VCE = Vin, Cin = 2.2 mF, Cout = 2.2 mF, TA = 25°C,
unless otherwise noted)
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Characteristic
Symbol
Min
Typ
Max Unit
Output Voltage (TA = 25°C, Iout = 10 mA)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
Vout
0.785 0.8 0.815
0.985 1.0 1.015
1.185 1.2 1.215
2.475 2.5 2.525
3.267 3.3 3.333
V
Output Voltage (TA = 40°C to 85°C, Iout = 10 mA)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
Vout
0.760 0.8 0.827
0.960 1.0 1.027
1.160 1.2 1.227
2.435 2.5 2.545
3.214 3.3 3.359
V
Output Current
Input Voltage
Line Regulation (Vin = Vout + 1.0 V to 6.5 V, Iout = 10 mA)
Load Regulation (Iout = 1 mA to 300 mA, Vin = Vout + 2.0 V)
Load Regulation (Iout = 1 mA to 1 A, Vin = Vout + 2.0 V)
Supply Current (Iout = 0 A, Vin = 6.5 V)
Standby Current (VCE = 0 V, Vin = 6.5 V)
Short Current Limit (Vout = 0 V)
Output Voltage Temperature Coefficient
Enable Input Threshold Voltage
(Voltage Increasing, Output Turns On, Logic High)
(Voltage Decreasing, Output Turns Off, Logic Low)
Iout
Vin
Regline
Regload03
Regload1
Iss
Istby
Ish
Tc
VthCE
1.6
1.0
1
0.05
20
80
65
0.15
250
$100
A
6.5 V
0.1 %/V
40 mV
120 mV
90 mA
0.6 mA
mA
ppm/°C
V
0.4
Enable Pulldown Current
Drop Output Voltage (TA = 25°C, Iout = 300 mA)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
VinVout
0.3
0.670
0.450
0.300
0.150
0.130
0.780
0.610
0.500
0.310
0.170
mA
V
Drop Output Voltage (TA = 25°C, Iout = 1 A)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
VinVout
1.150
1.000
0.870
0.500
0.430
1.650
1.450
1.380
1.100
0.650
V
Ripple Rejection (Ripple 200 mVpp, Iout = 100 mA, f = 1 kHz)
PSRR
70
dB
Output Noise (BW = 10 Hz to 100 kHz, Iout = 1 mA) Vnoise 45 mVrms
Thermal Shutdown Temperature/Hysteresis
Tshd/Hyst
165/30
°C
RDS(on) of additional output transistor (D version only)
RDS(on)
30
W
2. Maximum package power dissipation limits must be observed.
3. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
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