|
|
PDF NJW3281G Data sheet ( Hoja de datos )
| Número de pieza | NJW3281G | |
| Descripción | (NJW1302G / NJW3281G) Complementary NPN-PNP Silicon Power Bipolar Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NJW3281G (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
NJW3281G (NPN)
NJW1302G (PNP)
Preferred Devices
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The NJW3281G and NJW1302G are power transistors for high
power audio, disk head positioners and other linear applications.
Features
•ăExceptional Safe Operating Area
•ăNPN/PNP Gain Matching within 10% from 50 mA to 5 A
•ăExcellent Gain Linearity
•ăHigh BVCEO
•ăHigh Frequency
•ăThese are Pb-Free Devices
Benefits
•ăReliable Performance at Higher Powers
•ăSymmetrical Characteristics in Complementary Configurations
•ăAccurate Reproduction of Input Signal
•ăGreater Dynamic Range
•ăHigh Amplifier Bandwith
Applications
•ăHigh-End Consumer Audio Products
♦ăHome Amplifiers
♦ăHome Receivers
•ăProfessional Audio Amplifiers
♦ăTheater and Stadium Sound Systems
♦ăPublic Address Systems (PAs)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage - 1.5 V
Collector Current - Continuous
Collector Current - Peak (Note 1)
VCEO
VCBO
VEBO
VCEX
IC
250 Vdc
250 Vdc
5.0 Vdc
250 Vdc
15 Adc
30
Base Current - Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
IB 1.6 Adc
PD 200 W
1.43 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg -ā 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
RqJC
0.625 °C/W
Thermal Resistance, Junction-to-Ambient RqJA
40 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
©Ă Semiconductor Components Industries, LLC, 2008
January, 2008 - Rev. 0
1
www.DataSheet4U.com
http://onsemi.com
15 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS 200 WATTS
MARKING
DIAGRAM
NJWxxxG
AYWW
TO-3P
CASE 340AB
STYLES 1,2,3
xxxx
G
A
Y
WW
= 0281 or 0302
= Pb-Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NJW3281G
NJW1302G
Package
TO-3P
(Pb-Free)
TO-3P
(Pb-Free)
Shipping
30 Units/Rail
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NJW3281/D
1 page  
1200
1000
NJW3281G (NPN) NJW1302G (PNP)
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
PNP NJW1302G
TJ = 25°C
fTest = 1 MHz
1200
1000
NPN NJW3281G
TJ = 25°C
fTest = 1 MHz
800 800
600 600
400 400
200 200
0
0 10 20 30 40 50 60 70 80 90 100
VCB, COLLECTER-BASE VOLTAGE (V)
Figure 13. Output Capacitance
0
0
20 40 60 80
VCB, COLLECTER-BASE VOLTAGE (V)
Figure 14. Output Capacitance
100
12000
10000
8000
6000
4000
TJ = 25°C
fTest = 1 MHz
10000
8000
6000
4000
2000
2000
0 1 2 3 4 5 6 7 8 9 10
0
VEB, EMITTER-BASE VOLTAGE (V)
Figure 15. Input Capacitance
TJ = 25°C
fTest = 1 MHz
2468
VEB, EMITTER-BASE VOLTAGE (V)
Figure 16. Input Capacitance
10
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NJW3281G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NJW3281G | (NJW1302G / NJW3281G) Complementary NPN-PNP Silicon Power Bipolar Transistors | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |