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PDF NJW0302G Data sheet ( Hoja de datos )
| Número de pieza | NJW0302G | |
| Descripción | (NJW0281G / NJW0302G) Complementary NPN-PNP Power Bipolar Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NJW0281G (NPN)
NJW0302G (PNP)
Complementary NPN-PNP
Power Bipolar Transistors
These complementary devices are lower power versions of the
popular NJW3281G and NJW1302G audio output transistors. With
superior gain linearity and safe operating area performance, these
transistors are ideal for high fidelity audio amplifier output stages and
other linear applications.
Features
• Exceptional Safe Operating Area
• NPN/PNP Gain Matching within 10% from 50 mA to 3 A
• Excellent Gain Linearity
• High BVCEO
• High Frequency
• These Devices are Pb−Free and are RoHS Compliant
Benefits
• Reliable Performance at Higher Powers
• Symmetrical Characteristics in Complementary Configurations
• Accurate Reproduction of Input Signal
• Greater Dynamic Range
• High Amplifier Bandwidth
Applications
• High−End Consumer Audio Products
♦ Home Amplifiers
♦ Home Receivers
• Professional Audio Amplifiers
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current − Continuous
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction
Temperature Range
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
PD
TJ, Tstg
250
250
5.0
250
15
30
1.5
150
− 65 to
+150
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1
http://onsemi.com
15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 150 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
1
BASE
EMITTER 3
MARKING
4 DIAGRAM
NJWxxxG
AYWW
1 23
xxxx
G
A
Y
WW
TO−3P
CASE 340AB
STYLES 1,2,3
12
= 0281 or 0302
= Pb−Free Package
= Assembly Location
= Year
= Work Week
3
ORDERING INFORMATION
Device
NJW0281G
NJW0302G
Package
TO−3P
(Pb−Free)
TO−3P
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
Publication Order Number:
NJW0281/D
1 page  
NJW0281G (NPN) NJW0302G (PNP)
PACKAGE DIMENSIONS
TO−3P−3LD
CASE 340AB−01
ISSUE A
BB
C
Q
4
AL
(3°)
PK
123
G
3X D
0.25 M A B S
G
A
SEATING
PLANE
E
HF
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
U 2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 19.70 19.90 20.10
B 15.40 15.60 15.80
C 4.60 4.80 5.00
D 0.80 1.00 1.20
E 1.45 1.50 1.65
F 1.80 2.00 2.20
G 5.45 BSC
H 1.20 1.40 1.60
J 0.55 0.60 0.75
K 19.80 20.00 20.20
L 18.50 18.70 18.90
P 3.30 3.50 3.70
W Q 3.10 3.20 3.50
U 5.00 REF
W 2.80 3.00 3.20
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NJW0281/D
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