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C5354 PDF даташит

Спецификация C5354 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC5354».

Детали детали

Номер произв C5354
Описание NPN Transistor - 2SC5354
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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C5354 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5354
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
High-Speed DC-DC Converter Applications
2SC5354
www.DataSheet4U.com
Unit: mm
Excellent switching times: tr = 0.7 μs (max)
tf = 0.5 μs (max) (IC = 2 A)
High breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
900
800
7
5
8
2
100
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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C5354 Даташит, Описание, Даташиты
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VCB = 800 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 0.5 A
IC = 2 A, IB = 0.4 A
IC = 2 A, IB = 0.4 A
2SC5354
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Min Typ. Max Unit
― ― 100 μA
――
1 mA
900
V
800
V
10 ― ―
15 ― ―
― ― 1.0 V
― ― 1.3 V
Rise time
Switching time Storage time
tr VCC ≈ −360 V
20 μs IC = 2 A
― ― 0.7
tstg
Input IB1
Output
4.0 μs
IB2
Fall time
tf IB1 = 0.25 A, IB2 = 0.75 A,
duty cycle 1%
― ― 0.5
Marking
TOSHIBA
C5354
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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C5354 Даташит, Описание, Даташиты
2SC5354
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RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
20070701-EN
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
3 2006-11-10










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Номер в каталогеОписаниеПроизводители
C535NPN Transistor - 2SC535Renesas
Renesas
C5352NPN Transistor - 2SC5352Toshiba Semiconductor
Toshiba Semiconductor
C5353NPN Transistor - 2SC5353Toshiba
Toshiba
C5354NPN Transistor - 2SC5354Toshiba Semiconductor
Toshiba Semiconductor

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