|
|
PDF NDD03N50Z Data sheet ( Hoja de datos )
| Número de pieza | NDD03N50Z | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NDD03N50Z (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DataSheet.in
NDD03N50Z
N-Channel Power MOSFET
500 V, 3.3 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Continuous Drain Current RqJC
Continuous Drain Current
RqJC, TA = 100°C
Pulsed Drain Current, VGS @ 10 V
Power Dissipation RqJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
ID = 2.6 A
ESD (HBM) (JESD22−A114)
Peak Diode Recovery
VDSS
ID
ID
IDM
PD
VGS
EAS
Vesd
dv/dt
500
2.6
1.7
10
58
±30
120
2000
4.5 (Note 1)
V
A
A
A
W
V
mJ
V
V/ns
Continuous Source Current
(Body Diode)
IS 2.6 A
Maximum Temperature for Soldering
Leads
TL
260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. ID v 2.6 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C.
http://onsemi.com
VDSS
500 V
RDS(on) (MAX) @ 1.15 A
3.3 W
N−Channel
D (2)
G (1)
S (3)
4
1 23
IPAK
CASE 369D
STYLE 2
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 0
1
Publication Order Number:
NDD03N50Z/D
1 page  
DataSheet.in
10
NDD03N50Z
100
VGS v 30 V
SINGLE PULSE
10 TC = 25°C
1
100 ms 10 ms
1 ms
10 ms
dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 10 100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDD03N50Z
50% (DUTY CYCLE)
1
20%
10%
5%
0.1 2%
1%
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case) for NDD03N50Z
100
RqJC = 2.2°C/W
Steady State
1E+02
1E+03
10 50% (DUTY CYCLE)
20%
10%
1 5.0%
2.0%
1.0%
0.1
0.01
1E−06
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 14. Thermal Impedance (Junction−to−Ambient) for NDD03N50Z
RqJA = 41°C/W
Steady State
1E+02
1E+03
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NDD03N50Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NDD03N50Z | N-Channel Power MOSFET / Transistor | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |