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C5390 PDF даташит

Спецификация C5390 изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC5390».

Детали детали

Номер произв C5390
Описание NPN Transistor - 2SC5390
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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C5390 Даташит, Описание, Даташиты
DataSheet.in
2SC5390
Silicon NPN Epitaxial
High Frequency Amplifier
Features
Excellent high frequency characteristics
fT = 1.4GHz (typ.)
Low output capacitance
Cob = 2.4 pF (typ.)
Isolated package
TO–126FM
Outline
TO–126FM
ADE-208-492 (Z)
1st. Edition
December. 1996
1 2 3 1. Emitter
2. Collector
3. Base









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C5390 Даташит, Описание, Даташиты
DataSheet.in
2SC5390
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at Tc = 25°C
Symbol
VCBO
VCEO
VEBO
IC
ic(peak)
PC
PC * 1
Tj
Tstg
Ratings
110
110
3
200
400
1.4
7
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Collector to base breakdown V(BR)CBO 110 — — V
voltage
IC = 10É A, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
110
V
IC = 1mA, RBE =
Collector cutoff current
I CBO
——
Emitter cutoff current
IEBO — —
DC current transfer ratio
hFE
30 —
Base to emitter voltage
VBE
——
Collector to emitter saturation VCE(sat) — —
voltage
10 µA
10 µA
100
1V
1V
VCB = 100V, IE = 0
VE B = 3V, IC = 0
VCE = 10 V, IC = 10mA
VCE = 10 V, IC = 10mA
IC = 200mA, IB = 20mA
Gain bandwidth product
fT
Collector Output capacitance Cob
1.0 1.4 —
GHz
VCE = 10 V, IC = 50mA
— 2.4 3.5 pF VCB = 30V, IE = 0
f = 1MHz









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C5390 Даташит, Описание, Даташиты
DataSheet.in
Main Characteristics
Collector Power Dissipation
vs. Temperature
8
6
Tc
4
2
Ta
0 50 100 150 200
Ambient Temperature Ta (°C)
Case Temperature Tc (°C)
2SC5390
1000
Areaof Safe Operaion
ic(peak)
300 I Cmax
PW = 1 ms
10 ms
100
30
10
3
1 shot pulse
1 Ta = 25 °C
1 3 10 30 100 300 1000
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
200
10 m9A8m7mA6mA5mAm4A3mAmAA
100 2 mA
1 mA
Ta = 25 °C
Pulse Test I B = 0
0 5 10
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
500
200
25 °C 75 °C
100
50
Ta = –25 °C
20
10 VCE = 10 V
5 Pulse Test
1 2 5 10 20
Collector Current IC
50 100
(mA)
200










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Номер в каталогеОписаниеПроизводители
C5390NPN Transistor - 2SC5390Hitachi Semiconductor
Hitachi Semiconductor

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