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PDF HMC-APH608 Data sheet ( Hoja de datos )
| Número de pieza | HMC-APH608 | |
| Descripción | GaAs HEMT MMIC POWER AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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v03.0409
Typical Applications
This HMC-APH608 is ideal for:
• Point-to-Point Radios
3 • Point-to-Multi-Point Radios
• VSAT
• Military & Space
HMC-APH608
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Features
Output IP3: +40 dBm
P1dB: +30 dBm
Gain: 17 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 4.49 x 1.31 x 0.1 mm
Functional Diagram
General Description
The HMC-APH608 is a high dynamic range, two stage
GaAs HEMT MMIC 1 Watt Power Amplifier which
operates between 22.5 and 26.5 GHz. The HMC-
APH608 provides 17 dB of gain, and an output power
of +30 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-APH608 GaAs
HEMT MMIC 1 Watt Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data Shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifications[1], TA = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 950 mA [2]
Parameter
Min.
Typ. Max. Min.
Typ. Max.
Frequency Range
22.5 - 26.5
24 - 26.5
Gain
14.5 17
16 17
Input Return Loss
8 11
Output Return Loss
9 12
Output power for 1dB Compression (P1dB)
27 30
28 30
Output Third Order Intercept (IP3)
36 39
37 40
Supply Current (Idd1+Idd2)
950 950
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA
Units
GHz
dB
dB
dB
dBm
dBm
mA
3 - 214
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v03.0409
Assembly Diagram
3
HMC-APH608
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
3 - 218
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC-APH608.PDF ] | |
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