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PDF HMC797LP5E Data sheet ( Hoja de datos )
| Número de pieza | HMC797LP5E | |
| Descripción | 1 Watt Power Amplifier SMT | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.0510
HMC797LP5E
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Typical Applications
The HMC797LP5E is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
9 • Telecom Infrastructure
• Fiber Optics
Functional Diagram
Features
High P1dB Output Power: 28 dBm
High Psat Output Power: 29.5 dBm
High Gain: 13.5 dB
High Output IP3: 39 dBm
Supply Voltage: +10 V @ 400 mA
50 Ohm Matched Input/Output
32 Lead 5x5 mm SMT Package: 25 mm²
General Description
The HMC797LP5E is a GaAs MMIC pHEMT Distrib-
uted Power Amplifier which operates between DC
and 22 GHz. The amplifier provides 13.5 dB of gain,
39 dBm output IP3 and +28 dBm of output power at
1 dB gain compression while requiring 400 mA from
a +10 V supply. This versatile PA exhibits a positive
gain slope from DC to 22 GHz making it ideal for EW,
ECM, Radar and test equipment applications. The
HMC797LP5E amplifier I/Os are internally matched to
50 Ohms facilitating integration into Mutli-Chip-Mod-
ules (MCMs) and is packaged in a leadless QFN 5x5
mm surface mount package, and requires no external
matching components.
9-1
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 400 mA*
Parameter
Min. Typ. Max.
Frequency Range
DC - 12
Gain
11 12.5
Gain Flatness
±0.7
Gain Variation Over Temperature
0.012
Input Return Loss
13
Output Return Loss
12
Output Power for 1 dB Compression (P1dB)
26
28
Saturated Output Power (Psat)
29.5
Output Third Order Intercept (IP3)
39
Noise Figure
3.5
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
400 440
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 400 mA typical.
Min. Typ. Max.
12 - 18
11 13.5
±0.5
0.008
15
16
25 27
29
37
4
400 440
Min.
11
23.5
Typ.
18 - 22
13.5
±0.5
0.008
15
13
25.5
27
35
6
400
Max.
440
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 page  
v00.0510
HMC797LP5E
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
9
Reverse Isolation vs. Temperature
0
-10 +25C
+85C
-20 -40C
-30
-40
-50
-60
-70
0 4 8 12 16 20
FREQUENCY (GHz)
24
Power Compression @ 10 GHz
32
28 Pout
Gain
24 PAE
20
16
12
8
4
0
0 3 6 9 12 15 18 21 24
INPUT POWER (dBm)
Gain & Power vs. Supply Current @ 10 GHz
35
30
25
20
Gain
P1dB
Psat
15
10
300 320 340 360 380 400
Idd (mA)
Gain & Power vs. Supply Voltage @ 10 GHz
35
30
25
20
Gain
P1dB
Psat
15
10
8
9 10
Vdd (V)
11
Power Dissipation
6
5
4
3
2 Max Pdis @ 85C
2 GHz
10 GHz
1 20 GHz
0
0 4 8 12 16 20
INPUT POWER (dBm)
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC797LP5E.PDF ] | |
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