HMC757LP4E PDF даташит
Спецификация HMC757LP4E изготовлена «Hittite Microwave Corporation» и имеет функцию, называемую «1/2 Watt Power Amplifier SMT». |
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Детали детали
Номер произв | HMC757LP4E |
Описание | 1/2 Watt Power Amplifier SMT |
Производители | Hittite Microwave Corporation |
логотип |
8 Pages
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v00.0610
Typical Applications
The HMC757LP4E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
9 • Military & Space
Functional Diagram
HMC757LP4E
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Features
Saturated Output Power: 27.5 dBm @ 21% PAE
High Output IP3: 34.5 dBm
High Gain: 20.5 dB
DC Supply: +5V @ 400 mA
No External Matching Required
24 Lead 4x4 mm SMT Package: 16 mm²
General Description
The HMC757LP4E is a three stage GaAs pHEMT
MMIC 1 Watt Power Amplifier which operates be-
tween 16 and 24 GHz. The HMC757LP4E provides
20.5 dB of gain, and 27.5 dBm of saturated output
power and 21% PAE from a +5V supply. The RF I/Os
are DC blocked and matched to 50 Ohms. The 4x4
mm plastic package eliminates the need for wirebon-
dig, and is compatible with surface mount manufactur-
ing techniques.
Electrical Specifications, TA = +25° C, Vdd = +5V, Idd = 400mA [1]
Parameter
Min. Typ.
Frequency Range
16 - 24
Gain
18.5
20.5
Gain Variation Over Temperature
0.028
Input Return Loss
11
Output Return Loss
12
Output Power for 1 dB Compression (P1dB)
24.5
26.5
Saturated Output Power (Psat)
27.5
Output Third Order Intercept (IP3)[2]
34.5
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 400 mA typical.
[2] Measurement taken at Pout / Tone = +16 dBm
400
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
No Preview Available ! |
v00.0610
Broadband Gain &
Return Loss vs. Frequency
30
20
10
S21
S11
0 S22
-10
-20
-30
12 14 16 18 20 22 24 26 28
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-4
+25C
+85C
-40C
-8
-12
-16
-20
16
18 20 22
FREQUENCY (GHz)
24
P1dB vs. Temperature
31
29
27
25
23
21
16
+25C
+85C
-40C
18 20 22
FREQUENCY (GHz)
24
HMC757LP4E
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Gain vs. Temperature
28
+25C
+85C
24 -40C
20
16
12
16
18 20 22
FREQUENCY (GHz)
24
Output Return Loss vs. Temperature
0
-4
+25C
+85C
-40C
-8
-12
-16
-20
-24
16
18 20 22
FREQUENCY (GHz)
24
P1dB vs. Supply Voltage
33
31
29
5V
6V
7V
27
25
23
16
18 20 22
FREQUENCY (GHz)
24
9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
9-2
No Preview Available ! |
v00.0610
9
Psat vs. Temperature
33
31
+25C
+85C
-40C
29
27
25
23
16
18 20 22
FREQUENCY (GHz)
24
P1dB vs. Supply Current (Idd)
31
29
27
25
23
21
16
350mA
375mA
400mA
18 20 22
FREQUENCY (GHz)
24
Output IP3 vs.
Temperature, Pout/Tone = +16 dBm
45
40
+25C
+85C
-40C
35
30
25
16
18 20 22
FREQUENCY (GHz)
24
HMC757LP4E
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Psat vs. Supply Voltage
33
31
29
27
25
23
16
5V
6V
7V
18 20 22
FREQUENCY (GHz)
24
Psat vs. Supply Current (Idd)
31
29
27
25
350mA
375mA
400mA
23
21
16
18 20 22
FREQUENCY (GHz)
24
Output IP3 vs.
Supply Current, Pout/Tone = +16 dBm
45
40
350mA
375mA
400mA
35
30
25
16
18 20 22
FREQUENCY (GHz)
24
9-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
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Номер в каталоге | Описание | Производители |
HMC757LP4E | 1/2 Watt Power Amplifier SMT | Hittite Microwave Corporation |
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